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We present a detailed investigation for spin relaxation processes in silicon coupled quantum dots. Low-field magnetoconductance measurements have been employed to deduce phase dephasing and spin relaxation rates. On the basis of the dephasing theory containing triplet channel interaction, we have demonstrated that small energy transfer scattering process is the dominant dephasing mechanism, and strong electron-electron interaction results in an interdot spin-exchange relaxation process. Triplet-singlet relaxation is found to be another important spin relaxation process in the inner quantum dots, taking into account the triplet-singlet splitting induced by spin-orbit coupling. [ABSTRACT FROM AUTHOR]

Examines the light emission of fullerene embedded in porous silicon through. Use of ionized cluster beam deposition approach to improve the light emission of fullerene; Determination of photoluminescence spectra under excitation of argon laser; Interaction between fullerene molecule and silicon particles.

Self-pumped phase conjugation is observed using a KNbO3 crystal. The reflectivity of an external ring phase conjugate mirror is measured as a function of temperature for 515 nm radiation. The maximum reflectivity is 26% at 124 °C. On cooling, the reflectivity decreases and vanishes completely below 62 °C. The phase conjugate nature of the retroreflected beam is illustrated. The temperature-dependent response time is shown to be proportional to (T-56 °C)-1. [ABSTRACT FROM AUTHOR]