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Abstract: N doped and Al–N codoped ZnO films were prepared by dc reactive magnetron sputtering with a series of metal–Zn targets having different Al contents. The best p-type electrical properties of codoped ZnO, such as carrier concentration of 2.52×1017 cm−3, resistivity of 28.3Ωcm can be realized by using 0.4at.% Al target. Results of Hall effect and X-ray photoelectron spectroscopy (XPS) measurements confirm that the presence of Al indeed facilitates the incorporation of N through formation Aln codoped ZnO. Finally, a new judgement for codoping effect in ZnO is proposed tentatively: the best codoping effect can be realized when the codoped ZnO films possess a closest (002) d-spacing value to the nominally undoped ZnO. [Copyright &y& Elsevier]