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Photo-induced deposition of aluminum films on silicon dioxide and on a hydrogen terminated silicon surface was carried out using dimethylaluminum hydride (DMAH) and a deuterium lamp. After an initial nucleation was induced by irradiation, film growth was sustained without irradiation at a substrate temperature of 200°C where no deposition can occur via a thermal reaction alone. In addition, the growth rate decreased under irradiation during the growth period. An ArF laser also induced a similar photoinitiation effect.

Photo-induced effects on nucleation were compared on various surfaces during chemical vapor deposition of Al thin films, using dimethylaluminum hydride. The emission around 160 nm from a deuterium lamp was more effective for nucleation on a H-terminated Si surface than the emission around 240 nm. The catalytic reaction of a Ti layer for nucleation was promoted by irradiation, while the UV light suppressed nucleation on a Pd layer.