1. Band gap tuning in Si-SiO2 nanocomposite: Interplay of confinement effect and surface/interface bonding.
- Author
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Rani, Ekta, Ingale, Alka, Joshi, M.P., Kukreja, L.M., Mukherjee, C., Phase, D.M., and Chaturvedi, A.
- Subjects
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SILICON analysis , *SILICON testing , *SILICA , *SILICA testing , *NANOCOMPOSITE materials - Abstract
Correlation between size, bonding of Si and O at the surface/interface of Si nanocrystals and frequency of Si phonons in Si-SiO 2 nanocomposites is established using Raman mapping and X-ray photoelectron spectroscopy. Corroboration of these results with absorption spectroscopy shows that lowering of direct transition of light electron conduction band to heavy hole valence band ∼2.8 and 2.95 eV is a result of the interplay between effect of electron confinement (increases band gap) and oxidation bonding environment at the surface/interface (decreases band gap) of a nanocrystal in Si-SiO 2 nanocomposites. These studies have generated deeper insight into the fundamental understanding of the nanocomposite, which can allow easy optical microscopy monitoring of Si-SiO 2 based device fabrication. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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