1. Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal–oxide–semiconductor field-effect transistor with low on-state resistance
- Author
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Bo Zhang, Yuru Wang, Yi-He Liu, Li Chengzhou, Ming Qiao, Zhao-Jiang Lin, and Fang Dong
- Subjects
010302 applied physics ,LDMOS ,Materials science ,Computer simulation ,business.industry ,Doping ,General Physics and Astronomy ,Silicon on insulator ,Nanotechnology ,High voltage ,01 natural sciences ,Electric field ,0103 physical sciences ,Optoelectronics ,Breakdown voltage ,Field-effect transistor ,010306 general physics ,business - Abstract
An analytical model for a novel triple reduced surface field (RESURF) silicon-on-insulator (SOI) lateral double-diffused metal–oxide–semiconductor (LDMOS) field effect transistor with n-type top (N-top) layer, which can obtain a low on-state resistance, is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF SOI LDMOS is presented by solving the two-dimensional (2D) Poisson's equation, which can also be applied to single, double and conventional triple RESURF SOI structures. The breakdown voltage (BV) is formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of N-top layer (Qntop) is derived, which can give guidance for doping the N-top layer. All the analytical results are well verified by numerical simulation results, showing the validity of the presented model. Hence, the proposed model can be a good tool for the device designers to provide accurate first-order design schemes and physical insights into the high voltage triple RESURF SOI device with N-top layer.
- Published
- 2016