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In the framework of nonlinear wave optics, we report the evolution process of a dipole breathing wave in lossy nonlocal nonlinear media based on the nonlocal nonlinear Schrödinger equation. The analytical expression of the dipole breathing wave in such a nonlinear system is obtained by using the variational method. Taking advantage of the analytical expression, we analyze the influences of various physical parameters on the breathing wave propagation, including the propagation loss and the input power on the beam width, the beam intensity, and the wavefront curvature. Also, the corresponding analytical solutions are obtained. The validity of the analysis results is verified by numerical simulation. This study provides some new insights for investigating beam propagation in lossy nonlinear media [ABSTRACT FROM AUTHOR]

We investigate the controllable group velocity of a microwave probe field in a superconductive quantum circuit (SQC) pumped by microwave fields, and the use of such a SQC function as an artificial Λ-type three-level atom. The exchange between the subluminal and the superluminal states of the probe field can be realized simply by sweeping the pumping intensity, and the superluminal state is usually realized with a lower absorption. This work is one of the efforts to extend the study of electromagnetically induced transparency and its related properties from the lightwave band to the microwave band. [ABSTRACT FROM AUTHOR]

In this paper a new ring-shaped harmonic oscillator for spin 1/2 particles is studied, and the corresponding eigenfunctions and eigenenergies are obtained by solving the Dirac equation with equal mixture of vector and scalar potentials. Several particular cases such as the ring-shaped non-spherical harmonic oscillator, the ring-shaped harmonic oscillator, non-spherical harmonic oscillator, and spherical harmonic oscillator are also discussed. [ABSTRACT FROM AUTHOR]

An ultra-wideband and high-efficiency reflective linear-to-circular polarization conversion metasurface is proposed. The proposed metasurface is composed of a square array of a corner-truncated square patch printed on grounded dielectric substrate and covered with a dielectric layer, which is an orthotropic anisotropic structure with a pair of mutually perpendicular symmetric axes u and v along the directions with the tilt angles of ±45° with respect to the vertical y axis. When the u- and v-polarized waves are incident on the proposed metasurface, the phase difference between the two reflection coefficients is close to –90° in an ultra-wide frequency band, so it can realize high-efficiency and ultra-wideband LTC polarization conversion under both x- and y-polarized incidences in this band. The proposed polarization conversion metasurface is simulated and measured. Both the simulated and measured results show that the axial ratio (AR) of the reflected wave is kept below 3 dB in the ultra-wide frequency band of 5.87 GHz–21.13 GHz, which is corresponding to a relative bandwidth of 113%; moreover, the polarization conversion rate (PCR) can be kept larger than 99% in a frequency range of 8.08 GHz–20.92 GHz. [ABSTRACT FROM AUTHOR]

An ultra-wideband 2-bit coding metasurface is designed for radar cross-section (RCS) reduction. The design process is presented in detail, in which a polarization conversion metasurface (PCM) is first proposed. The proposed PCM can realize ultra-wideband circular polarization (CP) maintaining reflection. Moreover, Pancharatnam-Berry (PB) phase will be generated in the co-polarized reflection coefficient by rotating the metallic patches in its unit cells. Thus, based on the PCM, the four coding elements of a 2-bit coding metasurface are constructed using PB phase, and an ultra-wideband PB 2-bit coding metasurface is proposed according to an appropriate coding sequence. The simulated and experimental results show that the coding metasurface has obvious advantages of wideband and polarization-insensitivity. Compared to a metallic plate of the same size, it can achieve more than 10 dB RCS reduction in the frequency band from 9.8 GHz to 42.6 GHz with a relative bandwidth of 125.2% under normal incidence with arbitrary polarizations. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) van der Waals material is a focus of research for its widespread application in optoelectronics, memories, and spintronics. The ternary compound Nb2SiTe4 is a van der Waals semiconductor with excellent air stability and small cleavage energy, which is suitable for preparing a few layers counterpart to explore novel properties. Here, properties of bulk Nb2SiTe4 with large in-plane electrical anisotropy are demonstrated. It is found that hole carriers dominate at a temperature above 45 K with a carrier active energy of 31.3 meV. The carrier mobility measured at 100 K is about 213 cm2⋅V−1⋅s−1 in bulk Nb2SiTe4, higher than the reported results. In a thin flake Nb2SiTe4, the resistivity ratio between the crystalline axes of a and b is reaching about 47.3 at 2.5 K, indicating that there exists a large anisotropic transport behavior in their basal plane. These novel transport properties provide accurate information for modulating or utilizing Nb2SiTe4 for electronic device applications. [ABSTRACT FROM AUTHOR]

We have studied the optical matching layers (OMLs) and external quantum efficiency in the evanescent coupling photodiodes (ECPDs) integrating a diluted waveguide as a fibre-to-waveguide coupler, by using the semi-vectorial beam propagation method (BPM). The physical basis of OML has been identified, thereby a general designing rule of OML is developed in such a kind of photodiode. In addition, the external quantum efficiency and the polarization sensitivity versus the absorption and coupling length are analysed. With an optical matching layer, the absorption medium with a length of 30 mm could absorb 90% of the incident light at 1.55 mm wavelength, thus the total absorption increases more than 7 times over that of the photodiode without any optical matching layer. [ABSTRACT FROM AUTHOR]

We investigate the structural variation and physical properties of layered La2M5As3O2 (M = Cu, Ni) compound upon Co doping. It is found that the substitution of Co ion just induces the monotonous change of lattice constants without observing the anomalous kink in superconducting La2(Cu1–xNix)5As3O2 solid-solutions. Meanwhile, this doping barely changes As–As bond length in [M5As3]2– subunit (±2%), being significantly smaller than 7% shrinkage of that in La2(Cu1–xNix)5As3O2. Therefore, the doping dependence of crystal structure exhibits similar trend with Ba1–xKxFe2As2 without the interference of As1–As2 bonding, implying that the Co substitution for Cu/Ni is hole-doped. In terms of physical property, La2(Cu1–xCox)5As3O2 turns into itinerant ferromagnetic metal, while La2(Ni1–xCox)5As3O2 shows paramagnetism and suppressed structural phase transition upon Co-doping. The distinct structural variation and absence of superconductivity provide important clues to understand the effect of As–As bond in [M5As3]2– subunit. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) materials received large amount of studies because of the enormous potential in basic science and industrial applications. Monolayer Pd2Se3 is a fascinating 2D material that was predicted to possess excellent thermoelectric, electronic, transport, and optical properties. However, the fabrication of large-scale and high-quality monolayer Pd2Se3 is still challenging. Here, we report the synthesis of large-scale and high-quality monolayer Pd2Se3 on graphene-SiC (0001) by a two-step epitaxial growth. The atomic structure of Pd2Se3 was investigated by scanning tunneling microscope (STM) and confirmed by non-contact atomic force microscope (nc-AFM). Two subgroups of Se atoms have been identified by nc-AFM image in agreement with the theoretically predicted atomic structure. Scanning tunneling spectroscopy (STS) reveals a bandgap of 1.2 eV, suggesting that monolayer Pd2Se3 can be a candidate for photoelectronic applications. The atomic structure and defect levels of a single Se vacancy were also investigated. The spatial distribution of STS near the Se vacancy reveals a highly anisotropic electronic behavior. The two-step epitaxial synthesis and characterization of Pd2Se3 provide a promising platform for future investigations and applications. [ABSTRACT FROM AUTHOR]

This paper compares the properties of silicon oxide and nitride as host matrices for Er ions. Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system. After deposition, the films were implanted with Er3+ at different doses. Er-doped thermal grown silicon oxide films were prepared at the same time as references. Photoluminescence features of Er3+ were inspected systematically. It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe. However, a very high annealing temperature up to 1200 degC is needed to optically activate Er3+, which may be the main obstacle to impede the application of Er-doped silicon nitride. [ABSTRACT FROM AUTHOR]

This paper critically analyses and simulates the circuit configuration of the integral gated mode single photon detector which is proposed for eliminating the transient spikes problem of conventional gated mode single photon detector. The relationship between the values of the circuit elements and the effect of transient spikes cancellation has been obtained. With particular emphasis, the bias voltage of the avalanche photodiode and the output signal voltage of the integrator have been calculated. The obtained analysis results indicate that the output signal voltage of the integrator only relates to the total quantity of electricity of the avalanche charges by choosing the correct values of the circuit elements and integral time interval. These results can be used to optimize the performance of single photon detectors and provide guides for the design of single photon detectors. [ABSTRACT FROM AUTHOR]

Graphene is a new promising candidate for application in radio-frequency (RF) electronics due to its excellent electronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors (RF-FETs). Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum oscillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits. [ABSTRACT FROM AUTHOR]

In the present paper, the concentration effect of near-infrared quantum cutting of Tm3+ ion in (Y1–xTmx)3Al5O12 powder phosphor is studied by means of experiments and calculations. In addition, the absorption spectra, visible-to-near-infrared excitation and emission spectra, and fluorescence lifetimes are measured. It is found that (Y1–xTmx)3Al5O12 powder phosphor has a strong four-photon near-infrared quantum cutting luminescence of 1788.0-nm 3F4 → 3H6 fluorescence of Tm3+ ion, when excited by 357.0-nm light. It is also found that the up-limit of the four-photon near-infrared quantum cutting luminescence efficiency of (Y0.700Tm0.300)3Al5O12 powder phosphor is approximately 302.19%. To the knowledge of the authors, this is the first time that a near-infrared quantum cutting efficiency up-limit exceeding 300% has been reported. The results of this manuscript are valuable in aiding the probing of the new generation Ge solar cell. [ABSTRACT FROM AUTHOR]

It is an important problem in chaos theory whether an observed irregular signal is deterministic chaotic or stochastic. We propose an efficient method for distinguishing deterministic chaotic from stochastic time series for short scalar time series. We first investigate, with the increase of the embedding dimension, the changing trend of the distance between two points which stay close in phase space. And then, we obtain the differences between Gaussian white noise and deterministic chaotic time series underlying this method. Finally, numerical experiments are presented to testify the validity and robustness of the method. Simulation results indicate that our method can distinguish deterministic chaotic from stochastic time series effectively even when the data are short and contaminated. [ABSTRACT FROM AUTHOR]