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Cell division must be tightly coupled to cell growth in order to maintain cell size, whereas the mechanisms of how initialization of mitosis is regulated by cell size remain to be elucidated. We develop a mathematical model of the cell cycle, which incorporates cell growth to investigate the dynamical properties of the size checkpoint in embryos of Xenopus laevis. We show that the size checkpoint is naturally raised from a saddle-node bifurcation, and in a mutant case, the cell loses its size control ability due to the loss of this saddle-node point. [ABSTRACT FROM AUTHOR]

We experimentally generate high dimension chaotic waveforms with smooth spectrum using a distributed feedback (DFB) semiconductor laser with unidirectional fibre ring long-cavity feedback, and implement the stable chaos synchronization when the chaotic light is injected into a solitary DFB laser diode. The synchronization quality is investigated by time-domain and frequency-domain analysis separately. The frequency-domain analysis indicates that the synchronization has higher quality in the high frequency band. The influences of the injection strength and the frequency detuning on the synchronization are measured. Our experimental results show that the robust synchronization can be maintained with the optical frequency detuning from -UGHz to 40 GHz. [ABSTRACT FROM AUTHOR]

We demonstrate a harmonic mode-locked ytterbium-doped fibre ring laser, which consists of a polarization-sensitive isolator, two polarization controllers, two 976 nm laser diodes as the pump source and a two-segment ytterbium-doped fibre. Utilizing an additive pulse mode-locked technique based on nonlinear polarization evolution, the ytterbium-doped fibre laser can operate in mode-locked state by adjusting the position of polarization controllers. The cavity fundamental repetition rate is 23.78 MHz. We also observe the second- and third-harmonic mode locking in the normal dispersion region, and their repetition rates are 47.66 MHz and 71.56 MHz, respectively. Over-driving of the saturable absorber in the harmonic mode-locking pulse is analysed and discussed in detail. [ABSTRACT FROM AUTHOR]

A new multilayer-structured AlN/AlGaN/GaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AlN/AlGaN/GaN HEMT exhibits the maximum drain current density of 800 mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AlN/AlGaN/GaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 GHz and 29.0 GHz, respectively. [ABSTRACT FROM AUTHOR]

Electronic properties, surface chemistry and surface morphology of plasma-treated n-Al0.4Ga0.6N material are studied by electrical contact measurements, atomic force microscopy and x-ray photoemission spectroscopy. Although excessive etching can cause the surface roughness to significantly increase, the nitrogen vacancies VN produced by the excessive etching can be compensated for by the negative effects of the rougher surface. Thus, VN produced by excessive etching plays a key role in Ohmic contact of high-Al content AlGaN and it can reduce Ohmic contact resistance. The effect of rapid thermal annealing on the performance of n-Al0.4Ga0.6N can significantly reduce the etching damage caused by excessive etching. [ABSTRACT FROM AUTHOR]

We discuss an issue on the activation of p-GaN material under different annealing conditions and study the mechanism for the p-GaN activation. Under annealing in nitrogen, it is found that hydrogen cannot be completely removed from p-GaN. The experiments also indicate that rudimental hydrogen can exist stably in a certain state where hydrogen does not passivate the Mg acceptor in the sample annealing under bias. However, making additional annealing in nitrogen, we find that the steady state hydrogen can be decomposed and the Mg-H complex could generate again. Hydrogen remaining in the layer seems to play a major role in this reversible phenomenon. [ABSTRACT FROM AUTHOR]