1. High-Mobility P-Type MOSFETs with Integrated Strained-Si 0.73 Ge 0.27 Channels and High-κ/Metal Gates
- Author
-
Guilei Wang, Junfeng Li, Huilong Zhu, Shujuan Mao, Chao Zhao, and Zhengyong Zhu
- Subjects
010302 applied physics ,Electron mobility ,Materials science ,Silicon ,business.industry ,Relaxation (NMR) ,Transistor ,Oxide ,General Physics and Astronomy ,chemistry.chemical_element ,Nanotechnology ,Dielectric ,01 natural sciences ,law.invention ,chemistry.chemical_compound ,Semiconductor ,chemistry ,law ,0103 physical sciences ,Optoelectronics ,Field-effect transistor ,business - Abstract
Strained-Si0.73Ge0.27 channels are successfully integrated with high-κ/metal gates in p-type metal-oxide- semiconductor field effect transistors (pMOSFETs) using the replacement post-gate process. A silicon cap and oxide inter layers are inserted between Si0.73Ge0.27 and high-κ dielectric to improve the interface. The fabricated Si0.73Ge0.27 pMOSFETs with gate length of 30 nm exhibit good performance with high drive current (~428 μA/μm at V DD = 1 V) and suppressed short-channel effects (DIBL~77 mV/V and SS~90 mV/decade). It is found that the enhancement of effective hole mobility is up to 200% in long-gate-length Si0.73Ge0.27-channel pMOSFETs compared with the corresponding silicon transistors. The improvement of device performance is reduced due to strain relaxation as the gate length decreases, while 26% increase of the drive current is still obtained for 30-nm-gate-length Si0.73Ge0.27 devices.
- Published
- 2016