Search

In this work, the use of ruthenium tetroxide (RuO4) as a co-reactant for atomic layer deposition (ALD) is reported. The role of RuO4 as a co-reactant is twofold: it acts both as an oxidizing agent and as a Ru source. It is demonstrated that ALD of a ternary Ru-containing metal oxide (i.e. a metal ruthenate) can be achieved by combining a metalorganic precursor with RuO4 in a two-step process. RuO4 is proposed to combust the organic ligands of the adsorbed precursor molecules while also binding RuO2 to the surface. As a proof of concept two metal ruthenate processes are developed: one for aluminum ruthenate, by combining trimethylaluminum (TMA) with RuO4; and one for platinum ruthenate, by combining MeCpPtMe3 with RuO4. Both processes exhibit self-limiting surface reactions and linear growth as a function of the number of ALD cycles. The observed saturated growth rates are relatively high compared to what is usually the case for ALD. At 100 degrees C sample temperature, growth rates of 0.86 nm per cycle and 0.52 nm per cycle are observed for the aluminum and platinum ruthenate processes, respectively. The TMA/RuO4 process results in a 1 : 1 Al to Ru ratio, while the MeCpPtMe3/RuO4 process yields a highly Ru-rich composition with respect to Pt. Carbon, hydrogen and fluorine impurities are present in the thin films with different relative amounts for the two investigated processes. For both processes, the as-deposited films are amorphous.

ALD of a Y2O3 coating layer on Li metal anodes can effectively suppress Li dendrite growth, leading to a uniform plating–stripping process in Li metal batteries with more stable performance and prolonged lifespan.

The world of flexible devices has brought the interest to combine ALD and MLD films. However, direct ALD on MLD can suffer from stability/growth issues. Utilising O2 plasma, their compatibility can be enhanced, providing a more effective stacking.

Molecular layer deposition (MLD) of hybrid organic-inorganic thin films called "vanadicones" was investigated using tetrakisethylmethylaminovanadium (TEMAV) as the metal precursor and glycerol (GL) or ethylene glycol (EG) as the organic reactant. Linear and continued growth could only be achieved with GL as the organic reactant. The TEMAV/GL process displayed self-limiting reactions for both precursor and reactant pulses in the temperature range from 80 °C to 180 °C, with growth rates of 1.2 to 0.5 Å per cycle, respectively. Infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) revealed the hybrid nature of the films. From X-ray reflectivity, the density was estimated at 2.6 g cm