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In this paper, we investigated the effects of inserting an N-doped GeSbTe buffer layer on a Cu/Al2O3-based conducting-bridge random-access memory (CBRAM). The N-doped GeSbTe buffer layer induced a limited Cu ion injection during the set process due to Cu-Te bonding and N-doping in the buffer layer. In addition, joule heating confinement resulting from the low-thermal-conductivity buffer layer led to a low-residual conductive filament after the reset process. As a result, the on/off ratio of the Cu/Al2O3-based device increased from 102 to 105. Furthermore, the variability of the switching parameters such as high-resistance state and set/reset voltages distributions was significantly mitigated. The N-doping effects were confirmed by comparing the GeSbTe and the N-doped GeSbTe buffer-layer-inserted devices. The N-doped GeSbTe-inserted CBRAM exhibited an on/off ratio of > 105 up to 300 DC cycles without any noticeable data-state degradation.

The switching uniformity and reliability of the TaOx based resistive random access memory (RRAM) device were investigated with varying nitrogen doping concentration. The nitrogen doped samples shows excellent electrical and reliability characteristics such as small switching variability for 3-bit multilevel per cell (MLC), low power operation and good retention properties. Compared with control sample, improved device characteristics of nitrogen doped device can be explained by nitrogen induced filament confinement.

The switching uniformity and reliability of the TaOxbased resistive random access memory (RRAM) device were investigated with varying nitrogen doping concentration. The nitrogen doped samples shows excellent electrical and reliability characteristics such as small switching variability for 3-bit multilevel per cell (MLC), low power operation and good retention properties. Compared with control sample, improved device characteristics of nitrogen doped device can be explained by nitrogen induced filament confinement.

In this paper, we investigated the effects of inserting an N-doped GeSbTe buffer layer on a Cu/Al2O3-based conducting-bridge random-access memory (CBRAM). The N-doped GeSbTe buffer layer induced a limited Cu ion injection during the set process due to Cu-Te bonding and N-doping in the buffer layer. In addition, joule heating confinement resulting from the low-thermal-conductivity buffer layer led to a low-residual conductive filament after the reset process. As a result, the on/off ratio of the Cu/Al2O3-based device increased from 102to 105. Furthermore, the variability of the switching parameters such as high-resistance state and set/reset voltages distributions was significantly mitigated. The N-doping effects were confirmed by comparing the GeSbTe and the N-doped GeSbTe buffer-layer-inserted devices. The N-doped GeSbTe-inserted CBRAM exhibited an on/off ratio of > 105up to 300 DC cycles without any noticeable data-state degradation.