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Discusses comparative strategies for verification of an embedded flash memory module. Combination of analog and digital analog/mixed-signal netlist; Advantages of co-simulationwith flash memory; Elimination of the creation of stimulus files and behavioral models.

The article presents information on technological innovation in the field of flash making. To keep pace in the capacity race, flash makers must pack two data bits per memory cell. Some vendors are there today, some not. And the multilevel designs are typically slower, forcing configuration tricks to maintain fast read and write cycles. The emergence of video on some cell phones may call for greater storage capacity over the next four years, opening the door to hard drives. But by then flash will be so pervasive in phones it will be difficult for hard drives to get a broad hold. INSET: Storage demand remains unabated.

The article discusses options for designers of NAND flash memory subsystems. According to the author, designers can build their own discrete solutions using flash controllers and separate NAND devices, can use embedded NAND controllers within chipsets/processors, or can buy managed NAND solutions that offer the entire NAND memory subsystem in a pre-packaged solution. He adds that the the key difference in any NAND flash is the embedded flash file system. Key features of NAND flash are noted.

The article reports on the movement of typical SRAM in most designs toward a pseudo SRAM or PSRAM, basically DRAM with an SRAM wrapper around for handset memory. A version designed specifically for handsets is offered by Micron Technology Inc. A key driver of the latest storage technologies is the multimedia features creeping into handsets.

Reports that Aliner, APLS Electric, AVX, FCI, Hirose and Molex have developed smaller connectors which present lower profiles while maintaining durability. Claim that the combination of small form factor and ruggedness is a key concern for all mobile devices and particularly so for memory and multimedia card applications; Suggestion that many of the parts offer additional reliability features to ensure long life connections.

Features several new products which showed the migration trend from mask Read Only Memory to flash memory embedded into microcontroller integrated circuits. Information on the plan of Texas Instruments to unveil members of its 16-bit MSP430F4xx series; Features of COP8 from National Semiconductor Corp.; Details on Mitsubishi Electronics America Inc.'s M37641.

The article offers brief information on the memristors, a semiconductor storage device from Hewlett Packard (HP) Co. and Hynix Semiconductor.

The article discusses the cost advantages of antifuse-based one-time programmable (OTP) memory in relation to cell size and process complexity. The antifuse memory's design can be as small as one transistor using technology such as Sidense's IT-Fuse memory Internet Protocol (IP). The result is a memory cell area that is much smaller than floating-gate multi-time-programmable memories.

The article discusses the analysis of NAND flash devices from several manufacturers including Samsung Group, Toshiba, and Intel Corp. The analysis concentrates on the latest NAND devices ranging from 2-Gbit single-level cell (SLC) to 16-Gbit types. It is averred that NAND flash density has been endlessly increased from 2 Gbits at the 90-nanometer node to 16 Gbits at 43 nanometer.

The article cites that NAND flash density has already reached 16 gigabytes per die and beyond with two-byte per cell multilevel-cell technology using 50- and 40-nanometer process nodes. However, despite the impressive growth in bit density, program performance of NAND flash has remained in the 10 megabyte per second range.

The article discusses several considerations in the design of NAND flash memory, which is touted as the rising star of solid-state memory used in consumer applications and portable devices in 2007. It includes a description of the key features and specifications of NAND flash memory, as well as the issues' implications for electronic engineering.

The article reports on the decline of the NOR flash memory market. Following the announcement of Intel Corp. and STMicroelectronics NV, which is to sell their respective loss-ridden NOR units to a new and independent semiconductor company, the NOR market has experienced instability. According to Web-Feet Research Inc., the NOR flash business is expected to earn $7.9 billion in revenues in 2007, down from $8.6 billion in 2006. INSET: Birth of $3.6 billion player, by Mark LaPedus.

The article reports on the memory interface technology, Hyperlink NAND, developed by Mosaid Technologies Inc. in Taipei, Taiwan. The technology could increase input-output bandwidth in flash by about 10 times than conventional devices. It has the potential to advance performance in the nascent solid-state drive market.

The article features the 4-Gigabit (Gbit) NAND flash memory cell developed at the 65-nanometer (nm) node by Samsung Corp., making an advantage in the NAND market. The 4-Gbit NAND flash is a monolithic device that employs single-bit-per-cell technology, manufactured through a triple-metal, double-poly, 65-nm complementary metal oxide semiconductor process on a 131 square millimeter die. Samsung holds the top market position in the semiconductor memory markets.

The article evaluates the SpiFlash 25X line of serial flash memories from Winbond Electronics Corp. and offers information on dual-output SPI feature, how it speeds up transfer rates, and different applications.

The article reports on the addition of a complex and on-chip BCH error correction (ECC) technology to ST Microelectronics NV's four-gigabit NAND flash memory chip. Error correction is increasingly important as NAND chips begin to play a dual role, referring to the storage of code as well as data. Many customers put error correction on the memory controller, but this requires knowledge of ECC techniques.

The article presents information on the launch of an electronic device based on the serial peripheral interface (SPI) by Macronix International Co. Ltd. Macronix entered the market with what it claims are the fastest, lowest-power devices, offering key features not found in other serial flash parts. STMicroelectronics NV introduced a family of SPI standard-pinout serial flash memories for both data and parameter storage.

The article reports on the flash cell technology being offered by Memtek LLC. Based on intellectual property left in trust by noted nonvolatile-memory designer John Caywood and licensed exclusively to Memtek, a new cell developed by the company offers an unprecedented degree of robustness, easy process integration and a comparatively small size. Caywood's approach was to define a simple cell, not dependent on intricate process steps and so conservatively designed that it could function in demanding environments. The cell is exhibiting 125-year data retention and endurance in excess of a million cycles.

Reports that graphics could be processed faster by breaking up the dynamic random access memory(DRAM) array into a bunch of smaller independent arrays with separate row and column decoders. Overview of the microthreading; Difference between the Rambus microthreading scheme and a conventional DRAM; Need for a DRAM controller on the system side which is capable of sending multiple column and row commands in quick succession and of exchanging interleaved data with the four quadrants of the DRAM and sorting them out.

Reports that Hitachi Global Storage Technologies Inc. has launched notebooks with 2.5-inch drives that use perpendicular recording. Claim that Hitachi uses conventional current-in-plane giant magnetoresistive heads with single-pole write heads optimized for the perpendicular media; Expectation that Seagate Technology Inc. will also be releasing a perpendicular product; Suggestion that perpendicular recording will help vertically integrated companies such as Hitachi and Seagate distance themselves from their competitors.

Reports that NOR and NAND flash memory vendors competed to win a place for their chips in future cellular telephones at the 2005 International Solid-State Circuits Conference in San Francisco, California. Intensity of the competition between NOR and NAND flash memory vendors in the cellular telephone market; Introduction of baseband processors that give handset designers the option of putting NAND devices with synchronous DRAM in the stacked memory package.

This article focuses on technical aspects related to PIC microcontroller chips. Microchip Technology Inc.'s newest 8-bit PIC microcontroller chips have up to 128 kbytes of selfreprogrammable, high-endurance flash memory and run at 40 MHz over an operating range of 2.0 to 5.5 volts. With 10-Mips performance, the MCUs are said to be competitive with 16-bit devices in high-end embedded applications, while retaining ease of use and helping designers preserve their investments in 8-bit development tools and software.

Presents ARM7-based controllers that boost speed and flash density. Features and specifications of the LPC2130 series 32-bit microcontroller unit developed by Royal Philips Electronics NV; Retail prices of the LPC2130 series; Assessment of the product by eeProductCenter's Marty Gold.

Focuses on ways to migrate into low-cost and affordable 32-bit microcontroller unit platforms. Necessity of microprocessors to be synthesizable and available; Importance of optimizing the flash memory and the SRAM; Application of new techniques to the implementation of the main processor core to reduce the cost of 32-bit devices.

This article reports that the mobile handset is pushing the personal computer out of the technology driver's seat for high-density semiconductor memory and will likely call the shots for the rest of the decade, if the jockeying at Electronica in Munich, Germany, last week was any indication. New memory technologies are betting their future on the handset market and existing formats, from removable flash cards to mini hard drives, are circling. As the market has shifted from simple voice terminals to feature phones, smart phones and mobile media gateways, the little devices have sprouted operating systems, huge code spaces and file systems.

Presents the views of several semiconductor developers regarding the optimal memory solution as system-on-a-chip technology moves toward the 90-nanometer node. Texas Instruments Inc. director of ASP platform management Peter Rickert on a type of integrated nonvolatile memory based on ferroelectric capacitors; IBM Corp.'s effort to maximize the speed and flexibility of embedded dynamic RAM storage.

Announces a line of products launched by Synopsys Inc. to boost its memory intellectual-property (IP) efforts. Part of the rev of the DesignWare IP library; Memory models; Memory controllers; Memory built-in self-test.

Reports on the stacked memory developed by Matrix Semiconductor Inc. Fabrication method used in the chips; Planned introduction of the product; Foundry to manufacture the first chips.

Deals with the challenges faced by the computer memory market. Decline in cost for a megabyte of dynamic random access memory (DRAM); Factors that triggered the recovery of the industry in 1986; Purpose of some manufacturers in lowering their DRAM prices estimates.

Provides information on the flash cards developed by SanDisk Corp. for handheld computers and smart phones. Competition in the flash cards market; Cellular-phone companies that support SanDisk's MMC format for flash cards.

Presents several flash cards formats developed as removable storage media for mobile electronic device. Flash cards use by Polaroid Corp.; List of available flash cards formats its capacity, size file format, flash type and physical interface.

Focuses on the threatened collapse of dynamic random access memory (DRAM) prices worldwide and its impact on the Asian electronics industry. Price erosion in static RAM (SRAM); Revision of 1996 production schedules for higher-density DRAMs; Diversification into other memory markets; Oversupply of DRAM; Price cuts for the 16-megabit extended-data-out (EDO) DRAM.

The article focuses on the use of microcontroller with embedded flash memories (flash-MCUs) in real-time control application markets. According to the article, flash-MCUs are calculated to be over 30% of the MCU market in 2007 and are forecasted to make up over 50% of the MCU market by 2010. It is stated that embedded flash memory technology turn away from flash memory technologies due to their specific requirements.

The article focuses on the technological change poised in the semiconductor memory industry. According to researchers, the change is due to the three-dimensional multigate structures which drive transistors and memory architectures forward. It is stated that the expansion into the third dimension assures higher densities in smaller form factor to achieve requirements for bandwidth, radio-frequency performance and power consumption.

The article evaluates the 1-Gbit mobile Dynamic Random Acess Memory (DRAM) from Hynix Semiconductor Inc.

The article reports on speculations that Apple Inc in San Jose, California plans to introduce a NAND-based 16-and 32-Gigabyte video iPods. An Analyst at UBS Securities LLC, Alex Guana explained that the introduction will push the supply-demand balance of NAND flash memory back equilibrium. Average selling prices (ASP) for NAND chips has been forecasted to decline by as much as 65 percent in 2007.

The article reports on the launch of Intel Corp.'s first one-gigabit and single-chip 65-nanometer multilevel cell (MLC) NOR flash memory for cellular phones. The MLC memory is targeted at multimedia phones with megapixel cameras, video and high-speed data capabilities. It offers read speeds of up to one megabyte per second for faster response times and storage capabilities for four-megapixel cameras.

The article presents a Gartner Inc. business forecast for the NAND flash memory market in the world in 2006 and 2007. Indications of a sluggish market include a weak pricing environment as well as a lackluster launch of the iPod digital music player from Apple Computer Inc. The market saw the departure of two vendors and the entry of Shanghai, China-based Semiconductor Manufacturing International Corp.

The article discusses on an research conducted by the IBM Research Laboratory demonstrating a precisely designed organic molecule as the memory storage element. The laboratory claims that the molecule can be electrically programmed to store a bit in two bistable states, demonstrating how two identical molecules could solve the miniaturization hurdle for future memory chips.

The article reports that the spot prices for NAND-based flash memories have declined due to the sudden and falling demand in the MP3 player market and other factors. It also reports that iSuppli Corp. has cut its forecast for the NAND-based flash memory market in 2006, but raised its outlook for dynamic random access memory market.

The article reports that El Segundo, California-based iSuppli Corp. cut its 2006 forecast for NAND-based flash memory, but raised its outlook for dynamic random access memories (DRAM) despite Microsoft Corp.'s decision to delay the launch of its operating system called Vista. The cut in NAND flash market revenue forecast is due to a slowdown in the MP3 player market. The delay of Microsoft's Vista product may also impact computer and memory sales. However, the worldwide revenue for DRAM is expected to increase to 6.2 percent.

The article features the 128-megabit M25P128 serial flash device, which is designed for code storage in a variety of high-performance, cost-sensitive computer and consumer applications, developed by STMicroelectronics. It is available in the eight-millimeter by six-millimeter MLP8 package and in S016. Its software features include bulk and sector erase, flexible page program instructions, write protection and a Jedec-standard 16-bit electronic signature.

The article report on a survey conducted by the periodical "EE Times" and "eeProductCenter" to select the best of the best-the top 10 products in each of seven categories in its quarterly Ultimate Product survey. The seven categories were analog ICs; RF and microwave; logic/programmable logic and interface; test and measurement; processors and memory; power; and interconnection, passives and electromechanical components. Various products made the cut which includes Texas Instruments Inc. family of controllers for point-of-load converters, Samsung Electronics 16-Gbit NAND flash device, Stackpole Electronics Inc. surface-mount power resistor.

The article evaluates STMicroelectronics NV's 512-Mbit NOR flash memory for 3G handhelds and offers information on its speed for fast code execution and cost.

The article focuses on the way to select clock speed on Texas Instruments Inc.'s TMS320F2810, F2811 and F2812 generation of digital signal controllers to maximize the internal flash memory performance. The internal flash memory requires wait states based on the clock speed of the controller. Intuition suggests going with the fastest possible clock-e.g., 150 MHz. Interestingly, this turns out not to be the best bet. When computing the required wait states, any fractional wait states must be rounded up to the next-higher integer, creating longer flash access times than required.

Reports that Intel Corp. has developed a line of NOR-type flash memories optimized for code storage in systems as digital video cameras, industrial handhelds and communications equipment. Claim that the P30 flash line is based on Intel's StrataFlash multilevel-cell technology and 0.13 micron process; Suggestion that it will be shipped with software that eases the design burden for engineers using embedded Linux, WinCE or real-time operating systems.

Presents statistics indicating the state of the dynamic random access memory (DRAM) industry. Half-dozen DRAM densities; Only one of the world's top nine producers had positive operating margins for 2003 and 2004; Expected increase in sales of DRAMs into DVD video recorders and digital television sets; Vendor readiness to produce 512-Mbit chips meeting DDR2 specs in higher volume.

Evaluates the LPC2000 MCU microcontroller from Royal Philips Electronics. Speed and on-chip flash; Digital input-output lines; Design.

Evaluates the PIC18F4580 microprocessing unit from Microchip Technology. Combination of ECAN module and nanoWatt Technology power management; Flash program memory; Pin package options.

Presents the computer network resource website of eeProductCenter's product of the month, the ARM7-based microcontroller developed by Atmel Corp., AT91SAM7S32.