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Reported are 1.3 µm InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with a novel electrical confinement scheme based on lithographic definition and selective area epitaxial regrowth in the cavity region. More than 6 mW of output power with a record high differential efficiency of more than 70% is emitted from 10 µm large devices. [ABSTRACT FROM AUTHOR]

Results on strained InGaAs quantum well vertical cavity surface emitting lasers for optical interconnection applications are reported. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm is demonstrated at room temperature. The metal-organic vapour-phase epitaxy grown structure was processed as top p-type distribute Bragg reflector oxide-confined devices. [ABSTRACT FROM AUTHOR]

1.3 µm oxide confined GaInNAs VCSELs designed using the same design philosophy used for standard 850 nm VCSELs is presented. The VCSELs have doped mirrors, with graded and highly doped interfaces, and are fabricated using production-friendly procedures. Multimode VCSELs (11 µm oxide aperture) with an emission wavelength of 1287 nm have a threshold current of 3 mA and produce I mW of output power at 20°C. The maximum operating temperature is 95°C. Emission at 1303 nm with 1 mW of output power and a threshold current of 7 mA has been observed from VCSELs with a larger detuning between the gain peak and the cavity resonance. [ABSTRACT FROM AUTHOR]

Singlemode 1.28 µm InGaAs VCSELs, with a higher-order mode suppression >30 dB in the temperature range 25–85°C, have been fabricated using an inverted surface relief technique for relaxed fabrication tolerances. High performance 2.5 and 10 Gbit/s modulation is demonstrated in the same temperature range. [ABSTRACT FROM AUTHOR]

A correction to the article "High-Power InGaAs/GaAs 1.3 μm VCSELs Based on Novel Electrical Confinement Scheme," that was published in the June 12, 2003 issue is presented.