1. Hole-Induced Degradation in E-Mode GaN MIS-FETs: Impact of Substrate Terminations.
- Author
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Hua, Mengyuan, Yang, Song, Wei, Jin, Zheng, Zheyang, He, Jiabei, and Chen, Kevin J.
- Subjects
THRESHOLD voltage ,METAL oxide semiconductor field-effect transistors ,ELECTRONS - Abstract
We conducted reliability characterization under reverse-bias stress (i.e., stress at OFF-state with high V
DS ) on the E-mode GaN metal–insulator–semiconductor field-effect-transistors (MIS-FETs) with various substrate terminations. The MIS-FETs with floating substrate (FS) show worse threshold voltage (VTH ) stability than that with a grounded substrate. A non monotonic dependence of VTH shifts and OFF-state time-to-breakdown (tbd ) on the positive substrate bias (Vsub ) was also observed. The underlying mechanisms are the different impacts of positive Vsub on the drift of electrons and holes during the long-term stress. An important indication is that positive-biased and FS terminations should be restricted at OFF-state in order to obtain good VTH stability in applications of the GaN MIS-FET. [ABSTRACT FROM AUTHOR]- Published
- 2020
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