1. Compact Model of Dielectric Breakdown in Spin-Transfer Torque Magnetic Tunnel Junction.
- Author
-
Wang, You, Cai, Hao, Naviner, Lirida Alves de Barros, Zhang, Yue, Zhao, Xiaoxuan, Deng, Erya, Klein, Jacques-Olivier, and Zhao, Weisheng
- Subjects
- *
DIELECTRIC breakdown , *SPIN transfer torque , *MAGNETIC tunnelling , *NONVOLATILE memory , *CMOS integrated circuits - Abstract
Spin-transfer torque magnetic tunnel junction (MTJ) is a promising candidate for nonvolatile memories thanks to its high speed, low power, infinite endurance, and easy integration with CMOS circuits. However, a relatively high current flowing through an MTJ is always required by most of the switching mechanisms, which results in a high electric field in the MTJ and a significant self-heating effect. This may lead to the dielectric breakdown of the ultrathin ( $\sim 1$ nm) oxide barrier in the MTJ and cause functional errors of hybrid CMOS/MTJ circuits. This paper analyzes the physical mechanisms of time-dependent dielectric breakdown (TDDB) in an oxide barrier and proposes an SPICE-compact model of the MTJ. The simulation results show great consistency with the experimental measurements. This model can be used to execute a more realistic design according to the constraints obtained from simulation. The users can estimate the lifetime, the operation voltage margin, and the failure probability caused by TDDB in the MTJ-based circuits. [ABSTRACT FROM AUTHOR]
- Published
- 2016
- Full Text
- View/download PDF