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Research into the fabrication of interpoly dielectrics using nitrided-polysilicon is presented. The enhancements achieved in barrier height, breakdown strength, and charge-to-breakdown are studied.

Robust ultrathin oxynitride films were grown with efficient dielectric constant of 7.15.

In this article, the zinc-tin oxide (ZnSnxOy) based sensing membrane fabricated on a flexible polyethylene terephthalate substrate at room temperature as an extended-gate field-effect transistor (EGFET) is investigated for pH-sensing applications. The ZnSnxOy-based EGFET sensor showed a super-Nernstian pH response (70.79 mV/pH) with very good linearity (0.997), a low hysteresis voltage (6 mV), and a low drift rate (0.25 mV/h). The high pH sensing behavior is attributed to the redox reaction of amphoteric zinc oxide (ZnO) in different pH solutions. Furthermore, good flexibility and bendability were shown by the ZnSnxOy-based EGFET sensor after 400 bending cycles. [ABSTRACT FROM AUTHOR]

In this brief, the structural properties and sensing characteristics of spin-coated Ce2(Zr1–xTix)Oy (CZT) sensing film were investigated for electrolyte–insulator–semiconductor (EIS) pH sensors. A higher pH sensitivity of 64.42 mV/pH, a lower hysteresis voltage of 1.1 mV, and a smaller drift rate of 0.36 mV/h were achieved in the CZT-embedded EIS sensors at Zr/Ti = 53/47 stoichiometry. The higher sensing behavior in CZT is attributed to the good crystallization and higher surface roughness of the film. [ABSTRACT FROM PUBLISHER]

In this paper, we investigated the effect of In and Zn content on the structural properties and electrical characteristics of amorphous indium–zinc–tin oxide ( \alpha -InZnSnO) thin-film transistors (TFTs) featuring an Yb2TiO5 gate dielectric. The Yb2TiO5 \alpha -InZnSnO TFT prepared at the 30-W condition exhibited better electrical characteristics in terms of a low threshold voltage of 0.52 V, a high I{ \mathrm{\scriptscriptstyle ON}}/I{ \mathrm{\scriptscriptstyle OFF}} ratio of 1.1\times 10^{8} , a low subthreshold swing of 203 mV/decade, and a large field-effect mobility of 27.9 cm2/Vs. We attribute these results to the optimal Zn and Sn content on InZnSnO channel forming a smooth surface and thus reducing density of interface states at the oxide/channel interface. [ABSTRACT FROM PUBLISHER]

This paper describes the effect of titanium content on the structural and electrical properties of ErTixOy charge storage layers in amorphous indium–gallium–zinc oxide ( $\alpha $ -IGZO) thin-film transistor (TFT) nonvolatile memory (NVM) devices. X-ray diffraction, Auger electron spectroscopy, and X-ray photoelectron spectroscopy were used to study the film structural, depth profiling, and chemical features, respectively, of these films as the functions of the growth conditions (Ti plasma powers of 60, 100, and 140 W). The ErTixOy IGZO TFT NVM devices fabricated at the 100-W condition exhibited a larger memory window of 4.1 V, a smaller charge loss of 13% (after ten years), and a better endurance characteristic (up to 10^{5} program/erase cycles), as compared with other conditions. This result suggests that the Er2TiO5 film featuring a high dielectric constant and reducing an Er(OH)x layer can provide the higher charge-trapping efficiency and deeper electron trapping levels. [ABSTRACT FROM AUTHOR]

In this paper, we compared the structural and electrical properties of high-\kappa~Gd2O3 and GdTiO3 gate dielectrics for an amorphous indium–gallium-zinc oxide (\alpha-IGZO) thin-film transistor (TFT) application. In comparison with the Gd2O3 dielectric, the \alpha-IGZO TFT featuring the GdTiO3 dielectric exhibited better electrical characteristics in terms of a large field effect mobility of 26.9 cm^2/Vs, a low threshold voltage of 0.04 V, a high ION/IOFF ratio of 1.2\times 10^8, and a low subthreshold swing of 200 mV/decade. We attribute these results to the incorporation of Ti into the Gd2O3 film, forming a smooth surface and thus reducing density of interface states at the oxide/channel interface. In addition, the stability of threshold voltage on high-\kappa~Gd2O3 and GdTiO3 a-IGZO TFTs was studied under positive gate bias stress. [ABSTRACT FROM AUTHOR]

In this paper, we have successfully fabricated low-temperature polycrystalline silicon thin-film transistor (LTPS-TFT) nonvolatile memory devices employing high-\kappa~Eu2O3 and Y2O3 films as the charge trapping layer. The LTPS-TFT memory device uses band-to-band tunneling-induced hot hole injection and gate Fowler–Nordheim injection as the program and erase methods, respectively. Compared with the Y2O3 film, the LTPS-TFT memory device using an Eu2O3 charge-trapping layer exhibited a lower subthreshold swing and a larger memory window, a smaller charge loss, and a better endurance performance, presumably because of the higher charge-trapping efficiency of the Eu2O3 film. [ABSTRACT FROM AUTHOR]

In this study, we develop a high-performance metal–insulator–metal (MIM) capacitor using a high- k \Lu2 \O3 amorphous film for radio-frequency and mixed-signal applications. The Ni/ \Lu2\O3/TaN capacitor exhibited a high capacitance density, a low leakage-current density, and a relatively low quadratic voltage coefficient of capacitance. The leakage current at the low electric field (< 1.4 MV/cm) was dominated by the Schottky emission, whereas the Poole–Frenkel effect plays in the high electric field. In addition, the effects of constant voltage stress on leakage current and voltage linearity were comprehensively investigated, and excellent device reliability was also demonstrated. The Ni/ \Lu2\O3/TaN MIM capacitor appears to be very promising for future IC technologies. [ABSTRACT FROM PUBLISHER]

In this paper, we propose \Al/SiO2/\Dy2\O3/ \SiO2/ \Si, \Al/SiO2/\DyTix \Oy/\SiO2/\Si, and \Al/Al2 \O3/\DyTix\Oy/\SiO2/\Si as charge-trapping memory devices incorporating high-k \Dy2\O3 and Ti-doped \Dy2 \O3 films as charge-trapping layers, and \SiO2 and \Al2\O3 films as blocking layers. The \Al/Al2\O3/\DyTix \Oy/\break \SiO2/\Si memory device exhibited a larger memory window of \sim4.5 V (measured at a sweep voltage range of \pm9 V), a smaller charge loss of \sim20% (measured time up to \10^6\ \s and at 85 ^\circ\C), and better endurance (program/erase cycles up to \10^4) than other devices. These results suggest higher probability for trapping the charge carrier due to the Ti content in the \Dy2\O3 film, which produce a high dielectric constant and suppress the formation of the Dy-silicate layer, and create a deep trap level in the \DyTix\Oy film. [ABSTRACT FROM PUBLISHER]

In this paper, we propose a novel high-κ Y2O3 poly-Si-oxide-nitride-oxide-silicon (SONOS)-type flash memory. The structural and morphological features of Y2O3 films were studied using atomic force microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. These high-κ Y2O3 SONOS-type memories exhibited large threshold voltage shifting (memory window, of 1.9-4.33 V), almost negligible read and gate disturb (threshold voltage shift of ∼2-mV operation at VG = 3 V and VD = 4 V and ∼4-mV operation at VG = 8 V, respectively), excellent data retention (charge loss of ∼4% measured time up to 104 s and at room temperature, expected ∼ 22% charge loss for ten years at 125 °C), and superior endurance characteristics (program/erase cycles up to 105) because of the higher probability for trapping charge carriers. These Y2O3 films appear to be a very promising charge trapping layer for high-density two-bit nonvolatile flash memory applications. [ABSTRACT FROM AUTHOR]

Presents information on a study which developed a method to grow robust ultrathin oxynitride film with effective dielectric constant of 7.15. Experimental setup; Thickness of oxynitride films; Details on the ultrathin oxynitride dielectric films.