Metal–Oxide–High-k -Oxide–Silicon Memory Device Using a Ti-Doped \Dy2\O3 Charge-Trapping Layer and \Al2\O3 Blocking Layer.

In this paper, we propose \Al/SiO2/\Dy2\O3/ \SiO2/ \Si, \Al/SiO2/\DyTix \Oy/\SiO2/\Si, and \Al/Al2 \O3/\DyTix\Oy/\SiO2/\Si as charge-trapping memory devices incorporating high-k \Dy2\O3 and Ti-doped \Dy2 \O3 films as charge-trapping layers, and \SiO2 and \Al2\O3 films as blocking layers. The \Al/Al2\O3/\DyTix \Oy/\break \SiO2/\Si memory device exhibited a larger memory window of \sim4.5 V (measured at a sweep voltage range of \pm9 V), a smaller charge loss of \sim20% (measured time up to \10^6\ \s and at 85 ^\circ\C), and better endurance (program/erase cycles up to \10^4) than other devices. These results suggest higher probability for trapping the charge carrier due to the Ti content in the \Dy2\O3 film, which produce a high dielectric constant and suppress the formation of the Dy-silicate layer, and create a deep trap level in the \DyTix\Oy film. [ABSTRACT FROM PUBLISHER]