1. Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs
- Author
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Yu, Hao, Yadav, Sachin, O'Sullivan, Barry, Lin, Tzu-Heng, Rathi, Aarti, Alian, Alireza, Wu, Tian-Li, ElKashlan, Rana, Banerjee, Sourish, Peralagu, Uthayasankaran, Parvais, Bertrand, and Collaert, Nadine
- Abstract
We discuss a physical mechanism in the AlGaN/GaN high electron mobility transistors (HEMTs) that partial electrons from reverse gate leakage (
${I}_{\text {g,off}}$ $\Delta {V}_{\text {th}}$ $\Delta {V}_{\text {th}}$ ${V}_{\text {ds}}$ ${V}_{\text {ds}}$ ${I}_{\text {g,off}}$ ${V}_{\text {ds}}$ $\Delta {V}_{\text {th}}$ ${V}_{\mathbf {ds}}$ $\Delta {V}_{\text {th}}$ $\Delta {V}_{\text {th}}$ $\Delta {V}_{\text {th}}$ - Published
- 2024
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