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In this paper, a new actuation scheme for the push-pull electrostatic microelectromechanical systems comb drive actuators is proposed. The displacement amplitude excited by the new form of driving voltages can be more than three times as large as that which is achievable using the conventional form for the same applied system voltage. Index Terms--Microactuation, microelectromechanical systems (MEMS) comb drive.

Development of a monolithic power integrated circuit by making the lateral insulated gate bipolar transistor (LIGBT) the main switching device is a current topic. The overcurrent protection scheme is usually necessary to be built as part of the function in such a power integrated circuit. The protection circuit requires distinguishing various fault conditions and reacting differently based on the device safe operating area (SOA) limitation. At the same time, the protection circuit should also be relatively concise and suitable for integration. In this paper, a concise circuit suitable for integration and with gate drive capability is proposed to provide the complete function of overcurrent SOA protection for the LIGBT. The operational principle was described in detail and the circuit performance was verified with experimental results from both the discrete circuit and the fabricated LIGBT integrated circuit. Index Terms--Insulated gate bipolar transistor gate drive integration, overcurrent protection, smart power integration.

Proposes a concise circuit suitable for integration and with gate drive capability to provide the complete function of overcurrent safe operating area protection for the lateral insulated gate bipolar transistor. Importance of overcurrent protection scheme; Description of operational principle.

In this paper, a new actuation scheme for the push-pull electrostatic microelectromechanical systems comb drive actuators is proposed. The displacement amplitude excited by the new form of driving voltages can be more than three times as large as that which is achievable using the conventional form for the same applied system voltage. [ABSTRACT FROM AUTHOR]