1. 10-kV SiC MOSFET-Based Boost Converter
- Author
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Fatima Husna, Jun Wang, Jun Li, R. Callanan, Tiefu Zhao, Alex Q. Huang, Xiaohu Zhou, and Anant K. Agarwal
- Subjects
Forward converter ,Materials science ,business.industry ,Flyback converter ,Ćuk converter ,Electrical engineering ,Schottky diode ,Industrial and Manufacturing Engineering ,Control and Systems Engineering ,Boost converter ,MOSFET ,Junction temperature ,Electrical and Electronic Engineering ,business ,Diode - Abstract
10-kV silicon carbide (SiC) MOSFETs are currently being developed by a number of organizations in the U.S. with prospective applications in high-voltage and high-frequency power-electronic systems. The aim of this paper is to demonstrate the high-frequency and high-temperature capability of 10-kV SiC MOSFETs in the application of a dc/dc boost converter. In this study, 10-kV SiC MOSFET and junction barrier Schottky (JBS) diode were characterized and modeled in SPICE. Following this, a dc/dc boost converter based on a 10-kV 10-A MOSFET and a 10-kV 5-A JBS diode was designed and tested under continuous operation for frequencies up to 25 kHz. The boost converter had an output voltage of 4 kV, an output power of 4 kW, and operated with a junction temperature of 174degC for the SiC MOSFET. The fast-switching speed, low losses, and high-temperature operation capability of 10-kV SiC MOSFETs demonstrated in the dc/dc boost converter make them attractive for high-frequency and high-voltage power-conversion applications.
- Published
- 2009