236 results on '"Khachatrian, A."'
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2. Quantitative Prediction of Ion-Induced Single-Event Transients in an Operational Amplifier Using a Quasi-Bessel Beam Pulsed-Laser Approach
3. Examination of Trapping Effects on Single-Event Transients in GaN HEMTs
4. The Propagation of Extended SET Tails in RF Amplifiers Using 45-nm CMOS on PDSOI
5. Radiation Hardened Millimeter-Wave Receiver Implemented in 90-nm, SiGe HBT Technology
6. Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation
7. Examination of Trapping Effects on Single-Event Transients in GaN HEMTs
8. SET-Induced Dropout and Recovery of Cross-Coupled and Differential-Colpitts Microwave Oscillators Using SiGe HBTs
9. Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low-Noise Amplifier
10. Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs
11. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response—Part 2: Accurately Determining Laser-Equivalent LET
12. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response—Part 1: Metrics for Assessing Response Agreement
13. Pulsed-Laser Testing to Quantitatively Evaluate Latchup Sensitivity in Mixed-Signal ASICs
14. Using Machine Learning to Mitigate Single-Event Upsets in RF Circuits and Systems
15. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response – Part 1: Metrics for Assessing Response Agreement
16. SET-Induced Drop-out and Recovery of Cross-Coupled and Differential-Colpitts Microwave Oscillators Using SiGe HBTs
17. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response – Part 2: Accurately Determining Laser-Equivalent LET
18. Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs
19. The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs
20. Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low Noise Amplifier
21. Radiation Hardened Millimeter-Wave Receiver Implemented in 90-nm, SiGe HBT Technology
22. Simulation of Pulsed-Laser-Induced Testing in Microelectronic Devices
23. Mapping the Spatial Dependence of Charge-Collection Efficiency in Semiconductor Devices Using Pulsed-Laser Testing
24. Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption
25. Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation
26. Using Machine Learning to Mitigate Single-Event Upsets in RF Circuits and Systems
27. Pulsed-Laser Testing to Quantitatively Evaluate Latchup Sensitivity in Mixed-Signal ASICs
28. The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs
29. Quantitative Prediction of Ion-Induced Single-Event Transients in an Operational Amplifier Using a Quasi-Bessel Beam Pulsed-Laser Approach
30. Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects
31. Tradeoffs Between RF Performance and SET Robustness in Low-Noise Amplifiers in a Complementary SiGe BiCMOS Platform
32. New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles
33. Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach–Zehnder Modulator in a Si/SiGe Integrated Photonics Platform
34. Comparison of Sensitive Volumes Associated With Ion- and Laser-Induced Charge Collection in an Epitaxial Silicon Diode
35. Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI
36. Quantitative Prediction of Ion-Induced Single-Event Transients in an Operational Amplifier Using a Quasi-Bessel Beam Pulsed-Laser Approach
37. The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs
38. Best Practices for Using Electrostatic Discharge Protection Techniques for Single-Event Transient Mitigation
39. Investigation of Single-Event Transients in AlGaN/GaN MIS-Gate HEMTs Using a Focused X-Ray Beam
40. Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs
41. Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation
42. Mapping the Spatial Dependence of Charge-Collection Efficiency in Semiconductor Devices Using Pulsed-Laser Testing
43. Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption
44. The Propagation of Extended SET Tails in RF Amplifiers Using 45-nm CMOS on PDSOI
45. Simulation of Pulsed Laser-Induced Testing in Microelectronic Devices
46. Experimental Validation of an Equivalent LET Approach for Correlating Heavy-Ion and Laser-Induced Charge Deposition
47. SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients
48. Utilizing SiGe HBT Power Detectors for Sensing Single-Event Transients in RF Circuits
49. Tradeoffs Between RF Performance and SET Robustness in Low-Noise Amplifiers in a Complementary SiGe BiCMOS Platform
50. Comparison of Sensitive Volumes Associated With Ion- and Laser-Induced Charge Collection in an Epitaxial Silicon Diode
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