1. Radiation-hard static induction transistor
- Author
-
John Bartko, J. M. Hwang, P. Rai-Choudhury, M.H. Hanes, and S.G. Leslie
- Subjects
Nuclear and High Energy Physics ,Materials science ,business.industry ,Transistor ,Electrical engineering ,JFET ,Hardware_PERFORMANCEANDRELIABILITY ,Radiation ,law.invention ,Nuclear Energy and Engineering ,law ,Radiation damage ,Optoelectronics ,Field-effect transistor ,Electrical and Electronic Engineering ,Power MOSFET ,business ,Radiation hardening ,Static induction transistor - Abstract
The design, fabrication, and characteristics of a 350-V, 100-A buried-gate static induction transistor (SIT) as a power switching device for applications in military and space environments because of its potential for radiation hardness, high-frequency operation, and the incorporation of on-chip smart power sensor and logic functions are described. The potential radiation hardness of this class of devices was evaluated by measurement of SIT characteristics after irradiation with 100-Mrad (2-MeV) electrons and up to 10/sup 16/ fission neutrons/cm/sup 2/. High-temperature operation and the possibility of radiation damage self-annealing are discussed. >
- Published
- 1988
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