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In this paper, a compact circuit topology is presented for pulsed power generation with a semiconductor opening switch (SOS). Such circuits require the generation of a fast forward current through the diode, followed by a reverse current that activates the recovery process. In general, magnetic switches are used to switch the diode current from forward to reverse. Therefore, adjustment of the output voltage of an SOS pulser is difficult. This paper introduces a circuit that allows an adjustable output voltage of the pulser. A solution is realized with a premagnetizing circuit on the primary winding of a pulse transformer (PT), so that a third winding is not needed. The primary capacitor voltage can now be varied while maintaining proper saturation of the PT. [ABSTRACT FROM PUBLISHER]

This paper details the experimental evaluation and simulation of a 4-kV n-type gate turn-OFF thyristor (GTO) designed for pulsed power applications. The primary criteria of evaluation are rate of current rise ( dI/dt ), turn-ON delay time ( T_{D}) , and resistance of the device during turn-ON transients [ R_{\mathrm{\scriptscriptstyle ON}}(t)$ ]. The device under test (DuT) is an n-type asymmetric-blocking GTO manufactured by Silicon Power (Part No. 14N40A10) with a rated dc blocking voltage of 4 kV. A test circuit was specifically designed to minimize stray inductance in order to capitalize on the dI/dt$ capabilities of the DuT. Experimental data collected from resistance measurements are used to develop a single-switch approximate model for use in simulation. The results of dI/dt$ experiments provide a profile of DuT dI/dt$ operation beyond rated values; specifically dI/dt were readily achieved. The turn-ON delay time of the DuT is also characterized and determined to be $\sim 225$ ns on average. [ABSTRACT FROM AUTHOR]