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Because it possesses higher current turn-off capability, the inverse current commutation with semiconductor devices (ICCOS) is a better option for the opening switch of an inductive pulsed power supply than the integrated gate commutated thyristor. This paper investigates the counter-current capacitor, which is the key component that determines the turn-off result and the volume of the counter-current branch. The major contributions of this paper include the following: 1) deriving an analytical expression for the minimum precharged capacitor voltage that can reliably turn off the main switch; 2) verifying this expression through a series of experiments within a current range of 0 to 4000 A and an energy range of 0 to 50 kJ; 3) giving an approximate expression for the optimal capacitance that minimizes the precharged energy; and 4) investigating the variation trends of the optimal capacitance and the corresponding optimal precharged energy with varying inductor current. [ABSTRACT FROM PUBLISHER]

This paper details the experimental evaluation and simulation of a 4-kV n-type gate turn-OFF thyristor (GTO) designed for pulsed power applications. The primary criteria of evaluation are rate of current rise ( dI/dt ), turn-ON delay time ( T_{D}) , and resistance of the device during turn-ON transients [ R_{\mathrm{\scriptscriptstyle ON}}(t)$ ]. The device under test (DuT) is an n-type asymmetric-blocking GTO manufactured by Silicon Power (Part No. 14N40A10) with a rated dc blocking voltage of 4 kV. A test circuit was specifically designed to minimize stray inductance in order to capitalize on the dI/dt$ capabilities of the DuT. Experimental data collected from resistance measurements are used to develop a single-switch approximate model for use in simulation. The results of dI/dt$ experiments provide a profile of DuT dI/dt$ operation beyond rated values; specifically dI/dt were readily achieved. The turn-ON delay time of the DuT is also characterized and determined to be $\sim 225$ ns on average. [ABSTRACT FROM AUTHOR]