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This paper discusses a novel methodology to increase the voltage droop compensation range in generalized solid-state bipolar high-voltage Marx modulators with one resonant stage. To maintain the modularity characteristic of bipolar Marx modulators, the imbedding of additional resonant stages is not straightforward. Nevertheless, this paper proposes to add a second resonant stage to the already existing resonant-type voltage droop compensation stage. This second stage increases the voltage droop compensation percentage of a generalized solid-state bipolar Marx generator. The compensation of the bipolar pulse voltage droop is now achieved by adding two auxiliary synchronous compensation resonant voltages, to the output capacitive decaying voltage. Simulation and experimental results are presented for six Marx plus two resonant stages, 16% voltage droop, with 3-kV pulse amplitude, 100- $\mu \text{s}$ pulsewidth, 40-ms relaxation time, and 10-Hz pulse repetition rate. [ABSTRACT FROM AUTHOR]

This paper details the experimental evaluation and simulation of a 4-kV n-type gate turn-OFF thyristor (GTO) designed for pulsed power applications. The primary criteria of evaluation are rate of current rise ( dI/dt ), turn-ON delay time ( T_{D}) , and resistance of the device during turn-ON transients [ R_{\mathrm{\scriptscriptstyle ON}}(t)$ ]. The device under test (DuT) is an n-type asymmetric-blocking GTO manufactured by Silicon Power (Part No. 14N40A10) with a rated dc blocking voltage of 4 kV. A test circuit was specifically designed to minimize stray inductance in order to capitalize on the dI/dt$ capabilities of the DuT. Experimental data collected from resistance measurements are used to develop a single-switch approximate model for use in simulation. The results of dI/dt$ experiments provide a profile of DuT dI/dt$ operation beyond rated values; specifically dI/dt were readily achieved. The turn-ON delay time of the DuT is also characterized and determined to be $\sim 225$ ns on average. [ABSTRACT FROM AUTHOR]