1. Physical modeling of fast p-i-n diodes with carrier lifetime zoning, Part I: device model
- Author
-
Bryant, Angus T., Lu, Liqing, Santi, Enrico, Palmer, Patrick R., and Hudgins, Jerry L.
- Subjects
Diodes, Semiconductor -- Design and construction ,Power semiconductor devices -- Models ,Power electronics -- Research ,Business ,Electronics ,Electronics and electrical industries - Abstract
This paper presents the development and implementation of a physics-based diode model which can simulate aspects of high-voltage diodes such as snappy recovery during punch-through and the modified carrier density profile due to local lifetime control. It uses a Fourier series solution for the ambipolar diffusion equation in the lightly doped base region. The model is compared with finite-element device simulations. A parameter extraction procedure for the diode with lifetime control is proposed in Part II. Index Terms--Lifetime control, physics-based model, p-i-n diode model, power semiconductor modeling, variable lifetime.
- Published
- 2008