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Pb(Zr 0.52 Ti 0.48 )O 3 films with highly uniformc-axis orientation were fabricated on PbTiO 3 (PT)/ Pt(111)/SiO 2 /Si(100) substrates by hot isostatic pressing (HIP) from the amorphous state. All the PZT samples HIP-treated 500°C for 1 h under gas pressures of 1.0–2.0 MPa showed the preferred (001) orientation withc-axis orientation,α> 0.80. The relative permittivity tended to decrease gently with increasing HIP pressure, whereas the dielectric loss increased almost linearly in the 1.5–100 MPa. The PZT sample treated at 1.5 MPa had a symmetric and slim hysteresis loop shape with a remanent polarization,P r =15μC/cm 2 and coercive field,E c =60 kV/cm. Both samples treated at 10 and 100 MPa exhibited almost the fatigue-free behavior that resisted degradation even after 3×10 10 cycles. [ABSTRACT FROM AUTHOR]

Ferroelectric and piezoelectric properties of Pt/0.24Pb(Zn1/3Nb2/3)O3⋅0.384-PbZrO3⋅0.376PbTiO3 (PZNZT)/PbTiO3/Pt capacitors fabricated by crystallizing amorphous PZNZT films under high pressures of 1.0–176.5 MPa using hot isostatic pressing (HIP) are investigated. All of films HIP-treated under high pressure over 17.7 MPa hardly showed the fatigue degradation up to the switching cycles of 3× 1010. From piezomeasurements using piezoresponse scanning force microscopy, it was found that the sample HIP-treated under 1.8 MPa exhibited the highest saturated piezoelectric coefficient. [ABSTRACT FROM AUTHOR]