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This paper proposes a configurable reduced worst-case error approximate adder, named BEAD (B ounded E rror A pproximate A d der). The proposed adder is based on segmentation and carry speculation methods to cut long critical paths. Furthermore, a high accuracy speculation method is proposed to calculate the sum bits. However, the data of real-world applications is often not uniformly distributed, which leads to taking values that result in a worst-case error of the approximate adder quite frequently; therefore, considerable distortion occurs at the output. To overcome this, the carry prorogation scheme of the BEAD is such that the error distance is bounded to a given value, which makes it more accurate rather than prior works. Specifically, the BEAD offers a smaller worst-case error in addition to improved mean relative error distance. The results show between 50% and 80% smaller maximum error compared to the related works. Also, by synthesizing the different adders using a 15-nm FinFET technology, the results demonstrate that the BEAD has at least 30% area saving compared to the exact adder in the various studied configurations. The proposed adder achieves the almost lowest figure of cost (FoC) compared to state-of-the-art approximate adders. Moreover, BEAD's evaluation in image processing and DCT applications shows its great superiority over recently proposed structures. • Porposing an approximate adder based on segmentation and carry speculation methods. • Proposing a high precision speculation method to calculate the sum bits. • Bounding the error distance achieving in a smaller worst-case error. • Achieving the lowest figure of cost compared with prior approximate adders. [ABSTRACT FROM AUTHOR]

In this paper, a 7T SRAM cell with differential write and single ended read operations working in the near-threshold region is proposed. The structure is based on modifying a recently proposed 5T cell which uses high and low V TH transistors to improve the read and write stability. To enhance the read static noise margin (RSNM) while keeping the high write margin and low write time, an extra access transistor is used and the threshold voltages of the SRAM transistors are appropriately set. In addition, to maintain the low leakage power of the cell and increase the I on / I off ratio of its access transistors, a high V TH transistor is used in the pull down path of the cell. To assess the efficacy of the proposed cell, its characteristics are compared with those of 5T, 6T, 8T, and 9T SRAM cells. The characteristics are obtained from HSPICE simulations using 20 nm, 16 nm, 14 nm, 10 nm, and 7 nm FinFET technologies assuming a supply voltage of 500 mV. The results reveal high write and read margins, the highest I on / I off ratio, a fast write, and ultra-low leakage power in the hold “0” state for the cell. Therefore, the suggested 7T cell may be considered as one of the better design choices for both high performance and low power applications. Also, the changes of cell parameters when the temperature rises from −40 °C to 100 °C are investigated. Finally, the write margin as well as the read and hold SNMs of the cell in the presence of the process variations are studied at two supply voltages of 400 mV and 500 mV. The study shows that the proposed cell meets the required cell sigma value (6 σ ) under all conditions. [ABSTRACT FROM AUTHOR]