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This paper focuses on the simulation and optimization of electrical and optical properties such as current density-voltage (J-V ) , external quantum efficiency (EQE) and the photoluminescence spectra (PL) of InSb/GaAs quantum dot solar cell (QDSC). The InSb QDs have been inserted in the intrinsic region of p-i-n GaAs solar cell. Our results have been shown that 30 InSb/GaAs QD layers provide a relative enhancement of 22.35% and 29.30% of the short-circuit current and the efficiency, respectively. With the same number of the QD layers, the absorption range edge of low energy photons has been extended from 900 to 1400 nm. The electrical features obtained for InSb/GaAs QDSC have been compared with those obtained for InAs/GaAs QDSC in goal to show the better structure. The PL spectra has been also compared with experimental result for the same structure. Moreover, the QDSC has been optimized with respect to the thickness of QDs. The optimal conversion efficiency of 10 QD layers is improved from 14.85% to 18.30% by increasing the thickness of the QDs from 5 nm to 20 nm. [ABSTRACT FROM AUTHOR]

The electrical properties of InAsP/Si quantum dot solar cell (QDSC) are numerically studied and analyzed in this paper. Many effects like number of quantum dot (QD) layers inserted and Arsenic content of InAs x P 1-x on photovoltaic properties such as current density-voltage J-V and the external quantum efficiency (EQE) are investigated. Our results have been shown that the optimal Arsenic content is 0.6. With 30 InAsP/Si QDs layers, relative enhancements of about 7% and 6.70% of short-circuit current and efficiency are achieved, respectively. Otherwise, the absorption range edge of low energy photons was extended from 1120 to 1200 nm. This reveals that introduction of QDs in the intrinsic region of p -i- n Silicon (Si) solar cell enhances significantly the device characteristics beyond what has been reported for conventional semiconductor-based solar cells. [ABSTRACT FROM AUTHOR]

In this study, we experimentally elaborated Copper- and Indium-doped Zinc Oxide (Cu: ZnO and In: ZnO) thin films at different temperatures (T 1 = 480 °C and T 2 = 520 °C), the doping ratio were varied between 0% and 8%. Using a low cost solution-based chemical deposition, we have developed a ZnO thin film deposition process that offers fine-control of the surface morphology. It consists in spraying a volatile compound of the material to be deposited on a substrate maintained at high temperature to cause a chemical reaction in order to form at least one solid product. Therefore, the proposed ZnO doped layer is highly promising for applications for the next-generation solar cells. [ABSTRACT FROM AUTHOR]