1. Evaluation of atomic hydrogen effect using polycrystalline Ge thin-film transistors
- Author
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Naoto Matsuo, Akira Heya, and Shota Hirano
- Subjects
010302 applied physics ,Materials science ,Physics and Astronomy (miscellaneous) ,Passivation ,Hydrogen ,Orders of magnitude (temperature) ,Transistor ,General Engineering ,Analytical chemistry ,General Physics and Astronomy ,chemistry.chemical_element ,Germanium ,01 natural sciences ,law.invention ,Catalysis ,chemistry ,law ,Thin-film transistor ,0103 physical sciences ,Crystallite - Abstract
The influence of atomic hydrogen was investigated using a polycrystalline germanium (poly-Ge) thin-film transistor. High-density-atomic hydrogens were generated by catalytic reaction on a heated W mesh. The defect density in the poly-Ge film and at the poly-Ge/SiO2 interface can be reduced by three orders of magnitude with the passivation ratio of 2.3 × 10−5. From the dependence of treatment time and air exposure time for long time, the defects in poly-Ge films were preferentially terminated in comparison with that at the poly-Ge/SiO2 interface.
- Published
- 2019
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