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Start Over Author "G Guégan" Journal journal de physique iv (proceedings)
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1. Low temperature operation of ultra-thin gate oxide sub-0.1 μm MOSFETs

Author

G. Guégan, B. Cretu, F. Balestra, and Gerard Ghibaudo

Subjects
Materials science, CMOS, business.industry, Gate oxide, Thermal resistance, MOSFET, General Physics and Astronomy, Optoelectronics, Time-dependent gate oxide breakdown, Carrier lifetime, business, Threshold voltage, Leakage (electronics)
Abstract

The aim of this paper is to study the electrical properties of advanced nMOSFETs realized with ultra-thin gate oxide in various temperature ranges. The driving and leakage currents, carrier velocity and short channel effects are studied. Hot carrier degradation at low temperature is also addressed in order to evaluate the device lifetimes and the maximum drain biases that can be applied.

Published
2002

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