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Low temperature operation of ultra-thin gate oxide sub-0.1 μm MOSFETs
- Source :
- Journal de Physique IV (Proceedings). 12:57-60
- Publication Year :
- 2002
- Publisher :
- EDP Sciences, 2002.
-
Abstract
- The aim of this paper is to study the electrical properties of advanced nMOSFETs realized with ultra-thin gate oxide in various temperature ranges. The driving and leakage currents, carrier velocity and short channel effects are studied. Hot carrier degradation at low temperature is also addressed in order to evaluate the device lifetimes and the maximum drain biases that can be applied.
Details
- ISSN :
- 11554339
- Volume :
- 12
- Database :
- OpenAIRE
- Journal :
- Journal de Physique IV (Proceedings)
- Accession number :
- edsair.doi...........cf25d64add640c8d8bc3e4b1ed79a7d5