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Abstract Ca 0.66 Ti 0.66 Nd 0.34 Al 0.34 O 3 (CTNA) ceramics were prepared by solid-state reaction method and their sintering behavior, microwave dielectric properties, and microstructure were investigated. CTNA ceramics were examined by Raman scattering to reveal the correlation of perovskite structure with the microwave properties. It found that the area of peak A 1g (O) stretch mode reflects the quality factor Q × f value in the perovskite materials. This concludes that the oxygen octahedron plays an important role of the material's microwave performance. Sintering temperature affected the unit cell volume and the lattice parameters of the CTNA ceramics, the grain size distribution, the Gibbs free energy, the thermal expansion coefficient (CTE), and the dielectric properties (ε r , Q × f , τ f). The samples sintered at 1500 °C displayed the best dielectric constant and Q × f , as 44.94 and 41922.22 GHz, respectively. Highlights • The CTNA ceramics were sintered at different temperatures were investigated. • The thermal analysis detailed description of the stages of sintering process. • The unit cell volume is affected by the sintering temperature was confirmed by XRD. • Raman to reveal the correlation of structure with the microwave properties. • Relationship between grain size, Gibbs free energy, CTE, and dielectric properties. [ABSTRACT FROM AUTHOR]

• Polymer-matrix composites. • 3-Dimensional reinforcement. • Thermal properties. • Syntactic foams. • Hollow glass microspheres. Electronic packaging materials with low dielectric constant (D k) and high thermal conductivity (TC) are of vital importance in mitigating signal delay and enhancing heat dissipation efficiency in modern electronics. However, low D k and high TC are difficult to complement each other, because high TC filler usually possesses a high D k. Herein, we have newly designed a composite material simultaneously with low D k and high TC through hollow glass microspheres (HGMs), boron nitride particles, epoxy resin and reticulated porous ceramic (RPC). The composite material prepared by sintering HGMs and RPC is more effective in improving TC while keeping low D k. Specifically, the D k of the newly designed composite is lower than 3.0 with a large TC of 0.96 W/m·K. This new epoxy-matrix composite with both low D k and high TC can shed new light on designing electronic packaging materials for advanced miniaturized electronics. [ABSTRACT FROM AUTHOR]