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High-resolution x -ray photoelectron spectroscopy (XPS) was employed to characterize the energy band alignment between TiO 2 /multilayer (ML)-MoS 2 . The TiO 2 film and ML-MoS 2 film was grown by an atomic layer deposition (ALD) and chemical vapor deposition (CVD), respectively. The effect of CHF 3 plasma treatment on the band alignment between TiO 2 /ML-MoS 2 was evaluated. It was found that the valence band offset (VBO) and a conduction band offset (CBO) of TiO 2 /ML-MoS 2 interface was changed from 2.28 eV to 2.51 eV, and from 0.28 eV to 0.51 eV, respectively for the sample with CHF 3 plasma treatment. With the CHF 3 plasma treatment, the down-shift of Mo 3d core level binding energy results in a bend-up of energy potential on the MoS 2 side, leading to 0.23 eV ΔE C difference between the control and the sample with CHF 3 plasma treatment, which is caused by the interfacial layer in rich of F element. The physics details of the band alignment at TiO 2 /ML-MoS 2 interface will provide a guide for the MoS 2 based electronic device design. [ABSTRACT FROM AUTHOR]

The energy band alignment between Al 2 O 3 /multilayer (ML)-MoS 2 was characterized using high-resolution x -ray photoelectron spectroscopy (XPS). The Al 2 O 3 was deposited using an atomic layer deposition (ALD) tool. A valence band offset of 4.10 eV and a conduction band offset of 3.41 eV were obtained across the ALD-Al 2 O 3 /ML-MoS 2 interface. For comparison, the valence band offset and a conduction band offset were also obtained for ALD-SiO 2 /ML-MoS 2 interface. It was found out that ALD-Al 2 O 3 /ML-MoS 2 interface has a larger conduction band offset, compared to that of ALD-SiO 2 /ML-MoS 2 interface, which indicate ALD-Al 2 O 3 served as the gate dielectric for n-type ML-MoS 2 based field effect transistors has advantage over ALD-SiO 2 in term of suppressing the gate leakage current. [ABSTRACT FROM AUTHOR]