1. Rational synthesis of bandgap-tunable MS2(1−x)Se2x (M = Mo, W) alloys and their physical properties.
- Author
-
Liu, Ping, Li, Hao, Yang, Lei, Zhao, Benliang, Li, Maozhong, and Xiang, Bin
- Subjects
- *
BAND gaps , *X-ray photoelectron spectroscopy , *RAMAN scattering , *CHEMICAL synthesis , *TERNARY alloys - Abstract
Band gap engineering has been opening a way to enhance the performance of two-dimensional (2D) material devices. Here we report a synthesis of ternary MS 2(1−x) Se 2x (M = Mo, W) alloys with a band gap tunability of ∼170 meV using a solid state reaction method. X-ray photoelectron spectroscopy and Raman scattering characterizations reveal that the change of Se contents can be utilized to tune the composition of the ternary MS 2(1−x) Se 2x (M = Mo, W) alloys. UV–vis–NIR absorption results conform the realization of tunable band gap in MS 2(1−x) Se 2x (M = Mo, W) alloys tailored by different Se contents. The electrical transport investigation of the ternary alloys exhibits an n-type semiconductor behavior demonstrated by back-gated field effect transistors. [ABSTRACT FROM AUTHOR]
- Published
- 2017
- Full Text
- View/download PDF