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Highlights: [•] The coexistence of BRS and URS behaviors are observed in the V-doped ZnO film. [•] The transition from URS to BRS is realized by controlling I cc and voltage range. [•] Both BRS and URS modes possess good retention property and endurance. [ABSTRACT FROM AUTHOR]

In application scenarios such as astronautics, high-altitude aircraft, medical radiography, high-energy physics, and nuclear power plants, the irradiation resistance of electronic components is one of the basic requirements for their reliability. HfO 2 -based ferroelectric films have the advantages of high CMOS process compatibility, good miniaturizability, low operating voltage, and excellent irradiation resistance, which are the core materials for the new generation of irradiation resistance ferroelectric memories. In this paper, two kinds of metal-electrode ferroelectric capacitors, W/Hf 0.5 Zr 0.5 O 2 /W (WW) and Pt/Hf 0.5 Zr 0.5 O 2 /Pt (PP), have been prepared, and three gradient γ-irradiation experiments have been carried out on the two kinds of ferroelectric capacitors. The effect of metal electrodes on the irradiation resistance of Hf 0.5 Zr 0.5 O 2 ferroelectric thin films was carefully investigated by comparing and analyzing the statistical laws of polarization change and rectangularity change before and after irradiation of a large number of devices. The experimental results show that the WW devices have better irradiation resistance than PP devices, and we further explain the irradiation resistance mechanism by first-principle calculations and finite element analysis to verify the credibility of the experimental results. Finally, we conducted a comparative test of the fatigue and wake-up characteristics of the WW devices before and after irradiation, and the results show that the prepared W/Hf 0.5 Zr 0.5 O 2 /W devices can withstand very high total γ-dose radiation, reaching up to 13.86 Mrad(Si), and they are very suitable for the application of irradiation resistant electronics. [Display omitted] • The Hf 0.5 Zr 0.5 O 2 (HZO) thin films with outstanding ferroelectric properties were prepared. • The HZO ferroelectric thin films exhibited extremely high radiation tolerance (reaching up to 13.86 Mrad(Si)). • The effect of different metal electrodes on the irradiation resistance of HZO ferroelectric thin films was analyzed. [ABSTRACT FROM AUTHOR]

Abstract The lead-free multiferroic nano-multilayers composite thin films were fabricated on basis of ferroelectric (FE) Bi 3.15 Nd 0.85 Ti 3 O 12 (BNT) and ferromagnetic (FM) La 0.7 Ca 0.3 MnO 3 (LCMO) parents with 8 nm/6 nm periodicity, respectively. The crystal structure, switching of polarization, magnetization and temperature dependence of magnetoelectric coupling (ME) effect for the multiferroic BNT/LCMO composite thin films were investigated in detail, respectively. Ferroelectric behavior along with an enhanced remnant polarization (2 P r) of 42 μC/cm2, saturated magnetization around 151 emu/cm3, the enhanced piezoelectric coefficient d 33 of 263 pm/V and the enhanced magnetoelectric effect voltage coefficient of 72.1 mV/cm*Oe were obtained. The results show that the lead-free multiferroic films exhibit both good ferroelectric, dielectric and magnetic properties, as well as the enhanced ME effects, indicating that the coupling effects of electric and magnetic field exist in the fabricated Bi 3.15 Nd 0.85 Ti 3 O 12 /La 0.7 Ca 0.3 MnO 3 (BNT/LCMO) nano-multilayer thin films, and the strong ME effect originating from the magnetic-mechanical-electric interaction and interface coupling were demonstrated. These results can be particularly important for developing nano-composite multiferroic devices. Highlights • The lead-free BNT/LCMO nano-multilayers with 8/6 nm periodicity were fabricated. • The good ferroelectric properties and magnetic characteristics have been achieved. • The ME effects and mechanisms for the BNT/LCMO nano-multilayers were discussed. [ABSTRACT FROM AUTHOR]

In this work, the lead-free and BiFeO 3 doping Na 0.5 Bi 0.5 TiO 3 -BaTiO 3 thin films [(0.94- x )Na 0.5 Bi 0.5 TiO 3 -0.06BaTiO 3 - x BiFeO 3 (NBT-6BT- x BFO), x  = 0.00, 0.01, 0.03, 0.05 and 0.07] were deposited on Pt/Ti/SiO 2 /Si substrates by a sol-gel method. The enhanced ferroelectric properties and high energy-storage density have been achieved at 5% BiFeO 3 substitution. Moreover, the 5% BiFeO 3 doping Na 0.5 Bi 0.5 TiO 3 -BaTiO 3 (0.89NBT-0.06BT-0.05BFO) thin-films exhibited a high dischargeable energy density ( W recovered ) of 42.9 J/cm 3 with a corresponding energy-storage efficiency ( η ) of 65.7% under an electric field of 1720 kV/cm, and the high temperature stabilities with regard to their energy-storage properties over temperatures ranging from room temperature to 260 °C were demonstrated, and the charging and discharging characteristics demonstrate the faster microsecond discharge and large dielectric strength of the thin film capacitor. The results indicated that the 0.89NBT-0.06BT-0.05BFO thin-films might be promising environmentally friendly lead-free materials for energy-storage capacitor application. [ABSTRACT FROM AUTHOR]