1. Epitaxial growth of CoSi[sub 2] film by Co/a-Si/Ti/Si(100) multilayer solid state reaction.
- Author
-
Qu, Xin-Ping, Ru, Guo-Ping, Han, Yong-Zhao, Xu, Bei-Lei, Li, Bing-Zong, Wang, Ning, and Chu, Paul K.
- Subjects
EPITAXY ,THIN films ,SOLID state physics - Abstract
Epitaxial growth of CoSi[sub 2] by solid state reaction of Co/a-Si/Ti/Si(100) is investigated. A Ti/a-Si composite interlayer is used to modify the diffusion barrier and influence the epitaxial growth process. The epitaxial quality of the CoSi[sub 2] is improved compared to the film grown by Co/Ti/Si reaction. A multielement amorphous layer is formed by a solid-state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si while limiting the supply of Co atoms. CoSi[sub 2] grows as the first phase and the growth interface of the epitaxial CoSi[sub 2] is at both the CoSi[sub 2]/Si and CoSi[sub 2]/CoSi interfaces. Investigation of the growth kinetics shows that the activation energy of CoSi[sub 2] formation is larger than that without an amorphous Si layer. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Published
- 2001
- Full Text
- View/download PDF