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The free hole concentration and the low-field transport properties of Al-doped 4H-SiC epilayers with many acceptor concentrations grown on semi-insulating substrates are examined by using Hall-effect measurements. A Caughey-Thomas mobility model with temperature dependent parameters is used for describing the dependence of the hole mobilities on the acceptor concentration.

Photoluminescence (PL) properties of GaAs/AlAs multiple quantum wells are examined at 10 K under high density excitation conditions at excitation energies in the region of the fundamental excitons. The exciton-exciton scattering process has prevented the formation of biexcitons and the studies have confirmed the existence of optical gain leading to stimulated emission due to the exciton-exciton scattering process with use of a variable-stripe-length method.

The electrical optical and structural properties of co-evaporated A1:SiO thin films were studied. The results show that A1:SiO films can be used as a semitransparent mirror for a half-wavelength planar micro activity light-emitting diode.

The optical properties of V-shaped pits on Al(sub 0.16)Ga(sub 0.84)N were studied. The results indicated specific defect levels associated with the V-shaped pits.

A report on the temperature dependence of avalanche multiplication in submicron Al(sub 0.6)Ga(sub 0.4)As diodes structures at temperatures between 13 and 290 K is given. The temperature dependence on the 'enabled ' ionization coefficient can be accounted for by simply subtracting the ballistic dead space from the width of the avalanche region.

The magnetic properties and electronic structures of DyNi(sub 5-x)Al(sub x) compounds are reported. The magnetic behavior of nickel is analyzed in models, which take into account the electron correlation effects in d bands.

The discovery of a spontaneous and persistent buildup of an enormous surface potential upon the simple vacuum deposition of tris(8-hydroxyquinolinato) aluminum (III) (Alq(sub 3)) on an Au substrate under dark conditions is reported. The results confirm that the intensity of second-harmonic generation dramatically increased by the deposition of Alq(sub 3) under dark conditions, which supports the notion of a buildup of dipole layers.