1. Elucidation of the excitation mechanism of Tb ions doped in AlxGa1−xN grown by OMVPE toward a wavelength-stable green emitter.
- Author
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Komai, R., Ichikawa, S., Hanzawa, H., Tatebayashi, J., and Fujiwara, Y.
- Subjects
TERBIUM ,METAL organic chemical vapor deposition ,MONOCHROMATIC light ,LIGHT sources ,VISIBLE spectra - Abstract
The trivalent terbium ion (Tb
3+ ) emits ultra-stable visible light consisting of blue, green, yellow, and red. Tb-doped semiconductors are candidates for novel full-color light sources in next-generation displays. Particularly, Tb-doped Alx Ga1−x N (Alx Ga1−x N:Tb) has attracted much attention for device applications. We present the luminescence properties of Alx Ga1−x N:Tb grown by the organometallic vapor phase epitaxy. At 15 K, emission related to the5 D4 –7 FJ (J = 3, 4, 5, 6) transitions is observed for Alx Ga1−x N:Tb with x ≥ 0.03. Thermal quenching of emission originating from the5 D4 –7 FJ transition is suppressed for higher Al compositions, and the luminescence is clearly observed at room temperature for Alx Ga1−x N:Tb with x ≥ 0.06. The small thermal quenching is attributed to the enhanced excitation to the5 D4 level of Tb3+ ions via the 4f–5d transition and not due to the suppression of energy back-transfer paths in excited Tb3+ ions. Although additional emission originating from the5 D3 –7 FJ transitions is observed at 15 K for Alx Ga1−x N:Tb with x ≥ 0.15, it is not observed at room temperature because the excitation to the5 D3 level via the 4f–5d transition is less efficient at high temperature. For Al0.15 Ga0.85 N:Tb, monochromatic green light is demonstrated using a SiO2 /ZrO2 distributed Bragg reflector. [ABSTRACT FROM AUTHOR]- Published
- 2022
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