8 results on '"Hu, Chenming"'
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2. Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode.
3. Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology.
4. Quantum yield of electron impact ionization in silicon.
5. Hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistors: Oxide charge versus interface traps.
6. New analysis of a high-voltage vertical multijunction solar cell.
7. Two-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions
8. Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
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