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Quantum Hall effect measurements were used to investigate the effects of an undoped spacer layer in modulation-doped GaAs/AlGaAs heterostructures. The results showed that the mobility dependence gave an exponential profile which resulted from a change in the long-range interaction. Localized fractions were dependent on the step indices. The dependence was attributed to the short-range effects of interface roughness between the undoped layer and the buffer layer.

We have systematically analyzed the effect of strain on the electrical properties of flexible field effect transistors with a single-walled carbon nanotube (SWCNT) network on a polyethersulfone substrate. The strain was applied and estimated at the microscopic scale (<1 μm) by using scanning electron microscope (SEM) equipped with indigenously designed special bending jig. Interestingly, the strain estimated at the microscopic scale was found to be significantly different from the strain calculated at the macroscopic scale (centimeter-scale), by a factor of up to 4. Further in-depth analysis using SEM indicated that the significant difference in strain, obtained from two different measurement scales (microscale and macroscale), could be attributed to the formation of cracks and tears in the SWCNT network, or at the junction of SWCNT network and electrode during the strain process. Due to this irreversible morphological change, the electrical properties, such as on current level and field effect mobility, lowered by 14.3% and 4.6%, respectively. [ABSTRACT FROM AUTHOR]

An optical loss of GaN-based blue-violet laser diodes (BV-LDs) was measured by taking the intensity decay of edge emitting luminescence with respect to the distance from cleaved edge of a wafer to the position where an excitation laser was focused. Amplified spontaneous emission (ASE) was also investigated by tuning the power of an excitation laser on BV-LD wafers. Measurements were performed on wafers with different thicknesses of InGaN optical confinement layers (OCLs). The threshold power of ASE intensity was minimized at an optimum thickness of InGaN OCL. We also found that optical loss of wafers was determined by absorption of an InGaN layer in thicker OCL structure. From experimental data and fittings, we obtained 40 cm-1 for InGaN absorption at 405 nm. The optical field confined in OCL region was reasonably high enough to affect the overall modal loss in devices. Therefore, the optical losses still remained even though the Mg-doped GaN regions are far enough from the active layers. The crystal quality of an InGaN layer should be an important aspect to improve the performance of BV-LDs. [ABSTRACT FROM AUTHOR]

Comparative analysis of optical characteristics of In0.08Ga0.92N/In0.03Ga0.97N multiquantum well (MQW) laser diode structures grown on freestanding GaN and on sapphire substrates is reported. Higher quantum efficiency, higher thermal activation energy, smaller Stokes-like shift, and shorter radiative lifetime are observed for InGaN MQWs on GaN substrate than those of the same MQWs on sapphire substrate. From time-resolved optical analysis, we find that not only an increase in nonradiative lifetime due to reduced dislocation density but also a decrease in radiative lifetime caused by suppressed piezoelectric field play an important role in enhancing optical properties of InGaN MQWs on GaN substrates. [ABSTRACT FROM AUTHOR]

Photoreflectance (PR) spectra at various temperatures and photoluminescence (PL) spectra and high-resolution x-ray rocking curve (XRC) measurements are used to investigate the band alignment, epitaxial-strain, and atomic-ordering effects in In0.54Ga0.46P1-yNy/GaAs (y=0%–2.0%) heterostructures. The existence of additional peaks in PR spectra at higher levels of nitrogen (N) incorporation implies that the band alignment switches from type I to type II, due to the lowering of the conduction band. The electric field at the interface is determined and is discussed with the N content. Redshifts of the PR and PL peaks indicate that the band gap of InGaPN is dramatically reduced as N is incorporated. The valence-band splitting (VBS) and the spin-orbit splitting of InGaPN are obtained from PR spectra. High-resolution XRC measurements indicate that as the N content increases, the lattice mismatch and the compressive strain between the epilayer and GaAs substrate decrease while the VBS increases, which implies an increase in the degree of ordering in InGaPN caused by the transition from a cubic zinc blende structure to a [111] CuPt structure. The order parameter η of InGaPN deduced from the VBS ranges from 0.256 to 0.498, indicating that the InGaPN epilayer becomes more ordered with increasing N incorporation. [ABSTRACT FROM AUTHOR]

We demonstrate the fabrication of nanoelectromagnets and the magnetic capture of a single magnetic nanoparticle. The magnetic nanoparticles are extracted from magnetotactic bacteria and their diameter is approximately 50 nm. We show that a single nanoparticle is captured at each corner of the serpentine-shaped nanoelectromagnet, and the maximum magnetic field of 35 mT (and the maximum magnetic-field gradient of 4×105 T/m) is shown to be created at the capture spots of the nanoelectromagnet. It is also shown that there is a crossover between the magnetic force and the diffusion force at several hundred nm away from the magnet. This distance is comparable to the average interparticle distance. [ABSTRACT FROM AUTHOR]

Photoreflectance (PR) and Raman spectra were employed to investigate the interfacial characteristics of a series of oxide films on GaAs. The barrier heights across the interfaces and the densities of interracial states are determined from the PR intensity as a function of the pump power density. The oxide-GaAs structures fabricated by in situ molecular beam epitaxy exhibit low interfacial state densities in the low 10[sup 11] cm[sup -2] range. The density of the interface states of the Ga[sub 2]O[sub 3](Gd[sub 2]O[sub 3])-GaAs structure is as low as (1.24±0.14)×10[sup 10] cm[sup -2]. The Ga[sub 2]O[sub 3](Gd[sub 2]O[sub 3]) dielectric film has effectively passivated the GaAs surface. Additionally, Raman spectra were used to characterize the structural properties of the oxide films. [ABSTRACT FROM AUTHOR]

The surface barrier height and surface Fermi level of InA1As were investigated via photoreflectance spectra. Surface state density was then determined from the surface barrier height as a function of temperature, illumination power intensity, and intrinsic layer thickness. Results obtained from these three independent approaches all give the same conclusion, that the surface states are distributed over two separate regions within the energy band gap. Closely examining the photovoltage induced by various incident beam intensities revealed that the photovoltage effect is negligible when the illumination power intensity is below 1.0 µW/cm². [ABSTRACT FROM AUTHOR]

Photoreflectance is used to investigate the band gap, built-in electric field, and surface Fermi level of a series of lattice-matched In[sub 0.52]Al[sub 0.48]As surface-intrinsic n[sup +] structures having different undoped layer thicknesses. Experimental results indicate that, although the built-in electric field depends on the undoped layer thickness, there is a range of thickness within which the surface Fermi level is weakly pinned. From the dependence of electric field and surface Fermi level on the undoped layer thickness, we can determine that the surface states distribute over two separate regions within the energy band gap. The densities of the surface states are evaluated as well. Moreover, the dependence of the built-in electric field on undoped layer thickness is converted into the dependence of surface state density on the surface Fermi level in order to theoretically and exactly calculate the energy spectrum of the surface state density using a Guassian distribution function. The center and width of the distribution near the conduction band are obtained from the fitting parameters. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Presents a study that investigated the variations of Raman spectra for silicon-implanted gallium antimonide (GaSb) with various doses and energies. Advantages of ion-implantation technology over diffusion; Analysis of the Raman spectrum of the unimplanted GaSb wafer; Reasons for the broadening and weakening of the transverse and longitudinal optical phonon modes.

Temperature-dependent photoreflectance (PR) measurements are employed to characterize the conduction band structure of In0.54Ga0.46P1-yNy (y=0 and 0.02) grown on GaAs substrates. The band gap and the upper subband E+ transition are observed in InGaPN as predicted by the band anticrossing (BAC) model. To investigate the energetic positions of the features in the PR spectra, a Kramers–Kronig analysis is proposed. Based on the PR data and the BAC model, we find that the energy EN of isolated nitrogen states shifts significantly to higher energies with decreasing temperature. Simultaneously, the interaction potential V between the nitrogen states and the unperturbed conduction band also rises to higher values. At 293 K, EN=2.054 eV and V=1.513 eV are determined. The thermal shifts of EN and V are dEN/dT≈-0.43 meV/K and dV/dT≈-0.67 meV/K, respectively. The temperature-dependent EN level and interaction potential V are attributed to the lattice distortions, which can be affected by temperature-induced changes in deformation potential. This information is important for overall validity of the BAC model to dilute nitride InGaPN alloys. [ABSTRACT FROM AUTHOR]

Coordination polymers exhibiting magnetic properties can be considered as promising materials for magnetic applications. We obtained such materials by means pf mechanochemical incorporation of binuclear metal complexes Mn–O–Mn into polystyrene. Incorporation of binuclear manganese complexes was achieved by using substituted benzoquinones (organic acceptors) as intermediate ligands that react with manganese acetylacetonate and provide new coordination and stabilization of manganese in different valence states. Magnetic transitions in this system are due to reversible disproportionation process Mn3+–O–Mn3+⇔Mn2+–O–Mn4+ in the binuclear complex. The structure of the binuclear complex was obtained using ab initio calculations. [ABSTRACT FROM AUTHOR]

We report on mechanochemical synthesis and magnetic and electric properties of organic polymeric semiconductor that contains paramagnetic and ferromagnetic particles. As starting materials we used polyaniline (emeraldine base), polystyrene, FeCl3, and elemental sulfur. These components were chosen for the purpose of obtaining semiconductor polymer composite containing magnetic iron nanoparticles and having flexible thermomechanical properties. The presence of nanoparticles was evidenced by scanning electron microscopy. The value of conductivity of the Fe-doped polymer composite was increased by several orders of magnitude compared to the initial undoped polyaniline. Temperature dependence of the conductivity shows semiconductor character of the composite material. [ABSTRACT FROM AUTHOR]

By means of mechanochemical synthesis we obtained a coordination polymer containing binuclear manganese complexes with organic catechol/ortho-quinone ligands. The reaction system contained polystyrene, manganese acetylacetonate, and donor-acceptor mixture catechol/ortho-quinone. Electron paramagnetic resonance (EPR) and infrared spectroscopic data show that the binuclear manganese complex is covalently linked to the chain of polystyrene. Theoretical EPR spectrum analysis revealed a triplet state of the complex with two nonequivalent manganese ions coupled to each other by spin exchange. The type of magnetic coupling between manganese ions in this system is similar to the one in manganese based inorganic magnetic materials. [ABSTRACT FROM AUTHOR]

Both the epitaxial-strain and atomic-ordering effects in In0.54Ga0.46P1-yNy/GaAs (y=0%-2.0%) heterostructures are characterized by high-resolution x-ray rocking curve measurements and photoreflectance (PR) spectra at various temperatures. The lattice constant of InGaPN follows a bowing effect instead of Vegard’s law. The valence-band splitting (VBS) and spin-orbit splitting of InGaPN are obtained from PR spectra. As the nitrogen concentration increases, the lattice mismatch (the compressive strain) between the epilayer and GaAs substrate decreases while the VBS increases, which implies an increase in the degree of ordering of InGaPN. In addition, the order parameter η of InGaPN is deduced from the VBS. [ABSTRACT FROM AUTHOR]

We investigated paramagnetic properties of binuclear niobium complexes Nb-O-Nb with two nonequivalent Nb4+ ions in lithium-niobium phosphate glasses sLNPGd, in the environment of catechol/ortho-quinone ligands and in polyethylene. Experimental electron paramagnetic resonance spectrum analysis revealed nonequivalent distribution of the charge and electron spin density between two Nb atoms. Mechanochemical interaction of LNPG with an organic donor-acceptor mixture catechol/ortho-quinone followed by organic solvent extraction leads to the formation of a new binuclear complex with catechol/ortho-quinone ligands. This complex can be further incorporated into polyethylene matrix to form the complex with properties close to the complex in LNPG. [ABSTRACT FROM AUTHOR]

Chromium complexes, where ortho-quinone ligands are covalently linked to polymeric chains of polyethylene, polystyrene, and copolymer of ethylene and vinylacetate are studied. The results of infrared and electron paramagnetic resonance spectroscopic studies of chromium coordination polymers show that covalent linking of quinone ligands is accompanied by the change in the valence states of chromium Cr(III)↔Cr(IV)↔Cr(V). The ligand field of the triplet Cr4+ ion is close to the one in Cr-doped Y2SiO5, a laser material in the visible and infrared regions. Therefore some useful magnetic and/or optical properties in such transition metal coordination polymers can be expected. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We report on synthesis of Co, Ni, and Fe nanoparticles by the action of elastic wave pulses on solid phase sandwich type samples containing metal salt, reducing agent, polyethylene, and polyacrylamide. The formation of metal nanoparticles is evidenced by ferromagnetic resonance and scanning electron microscopy. The product yield for the nanoparticles formation has a threshold character with the pressure in the elastic wave pulse. The maximum amount of Co, Ni, and Fe nanoparticles is observed around 20 kbar of pressure in elastic wave pulses. The presence of polyacrylamide in reaction composites increases the stability of metal nanoparticles to oxidation by two orders of magnitude. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]