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An Nb Josephson junction with a Hf/HfN double overlayer structure was fabricated and presented. The characteristics of the device were not affected by annealing at temperatures up to 350 degrees celsius. The Hf layer acted as a layer for the tunneling barrier formation and as an effective etch stop for a reactive ion etching process during the fabrication of the junction. The HfN layer acted as a stop for grain boundary diffusion between the Nb and Hf layers.

Presents a study that investigated plasma nitridation process for superconducting niobium wiring to improve their annealing stability. Method of the study; Results and discussion; Conclusion.

Presents a study that examined Nb/AlO[subx] and Al/Nb interfaces in Nb/AlO[subx]-Al/Nb junctions made by varying certain process parameters. Background on the Josephson junction; Analysis of the anodization of basic structures; Assessment of the annealing effects.

Presents information on a study which described a selective plasma oxidation method for use in making superconducting patterns in nonsuperconducting deoxygenated YBa[sub2]Cu[sub3]O[sub7-x] (YBCO) thin films. Electrical properties of the thin films; Description of the selective plasma oxidation of YBCO films using a metal mask; Effects of plasma oxidation on polycrystalline YBCO films; Conclusions.

Presents a study that calculated and obtained an approximate expression for the thermal noise-limited sensitivity of the pulse-biased SQUID sensor used in the integrated magnetometer. Function of SQUID magnetometers; Description of the magnetometers; Discussion on the real magnetic flux noise.

Presents a study which fabricated high-quality, submicrometer niobium/aluminum oxide[subx]/niobium Josephson junctions. Information on the junction area; Importance of using stress-free niobium for the junction electrodes; Construction of the trilayer structure of the junction.

Reports on the transistor characteristics of a three-terminal structure having YBa[sub2]Cu[sub3]O[sub7-x] electrodes on an insulating SrTiO[sub3] substrate with an intervening NdGaO[sub3] barrier. Illustration of the device structure; Schematic band diagrams of emitter-grounded dielectric-base transistor.