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Research on silicon oxide films is examined in detail, including the significance of spectra frequency shifts and how the model can explain them.

Research describing the dielectric properties of silicon oxide films is presented. In particular the dielectric contribution of ionic, electronic and and dipolar polarization is investigated.

Laser molecular beam epitaxy was used to grow SrVo3 films and the interface chemistry and electrical properties were studied.

Understandings on the dielectric and electrical conduction properties of high dielectric (Ba,SR)TiO3 thin films are critical to the successful implementation of the material into dynamic random access memory devices as the dielectric layers of the capacitors or the gates. A study was therefore conducted to analyze the depletion nature and electrical conduction behavior of sputter deposited (Ba,SR)TiO3 thin films when the films have thicknesses ranging from 30 nm-150 nm. Results are discussed.

Thermal annealing of Co/Ta bilayer on a Si(100) wafer in the NH3 ambient is used in the growth of CoSi2 epitaxial layer. Two aspects of the epitaxial growth of CoSi2 involve the thermal annealing of an intermediate Ta layer between a Co layer and a Si wafer. One method utilizes the reduction of a native oxide on a Si substrate, causing an clear Si surface. The other method utilizes the limitation of a flux of Co atoms to the Si surface. This results in the most stable phase CoSi2. The epitaxial layer of CoSi2 with a coherent interface and a Si substrate is produced at an early stage of annealing.

Resistive switching (RS) and electrical endurance characteristics of amorphous Sb2O5 films in Pt/Sb2O5/Pt and Sb/Sb2O5/Pt structures were examined. Although both structures showed unipolar RS characteristics with power consumption smaller than those of other various transition metal oxides by ∼ two orders of magnitude, enhanced electrical endurance was obtained when Sb was employed as the top electrode than when Pt was employed as the top electrode. This improvement was explained by the creation of Sb clusters in the Sb2O5 films through the diffusion of oxygen from Sb2O5 to the Sb layer and the suppression of excessive oxygen loss during conducting filament formation process by the Sb top electrode. Metallic Sb clusters in pristine Sb2O5 films were confirmed by X-ray photoelectron spectroscopy depth profiling measurements and Auger electron spectroscopy. From the results of current density variation as a function of sample area, it was confirmed that the RS properties of Sb2O5 were controlled by the localized conducting filament in Sb2O5; this finding was in agreement with the result of high resolution transmission electron microscopy. The RS properties of this pnictogen oxide material are discussed with the RS properties of other transition metal oxide materials. [ABSTRACT FROM AUTHOR]

Amorphous gallium indium zinc oxide (a-GIZO) thin films of different compositions (Ga2O3:In2O3:ZnO=1:1:1,2:2:1,3:2:1,4:2:1) on Si substrates were investigated by high-resolution x-ray photoelectron spectroscopy and x-ray absorption spectroscopy (XAS) using synchrotron radiation. The O 1s, Ga 3d, In 4d, Zn 3d core, and shallow-core levels as well as the valence band maxima and O K-edge XAS were investigated. Each O 1s spectrum could be deconvoluted by a main component (O1 in the text) representing the Ga–In–Zn–O quaternary system along with two other higher-binding energy (BE) components (O2 and O3 in the text). The O2+O3 intensity increased as the Ga2O3 content increased. For the as-prepared samples, the spectral peak separations between the Ga 3d (∼20 eV) and Zn 3d (∼11 eV) orbitals and between the In 4d (∼18 eV) and Zn 3d orbitals became larger, respectively, as the Ga2O3 content increased. For the surface-cleaned samples, this trend was the same but with smaller increases in their separations. The sputter-cleaning effectively reduced the Zn 3d intensity by ∼30% relative to those of Ga 3d and In 4d. The valence band maximum shifted toward higher BE, up to ∼0.5 eV for the as-prepared samples and ∼0.25 eV for the cleaned samples, and the conduction band minimum (measured at the O K-edge) was measured at photon energies ranging upwards to ∼0.2 eV as the Ga2O3 content increased, demonstrating that the band gap can be tailored by increasing the Ga2O3 content. The effects of increasing Ga2O3 contents on the local chemical states and the corresponding electrical conduction are discussed in this paper. [ABSTRACT FROM AUTHOR]

Deals with a study which investigated stress-temperature behaviors of RuO[sub2] thin films on (100) silicon by measuring the deflection of film-coated substrates in situ during thermal cycling. Experimental methods; Results and discussion; Conclusion.

Presents a study that investigated the solid state reactions of bilayer systems with a silicon substrate. Method of the study; Results and discussion; Conclusion.

Presents a study which investigated the thickness dependence of the preferred orientation of Mn-Zn ferrite thin films deposited by ion-beam sputtering. Theories of preferred orientation; Examination of the thickness dependence of magnetic properties of the ferrite films; Importance preferred orientation of thin films.

Describes a technique for the formation of titanium (Ti)-nitrogen (N) film with large grain size from TiN layer deposited by sputtering in argon and nitrogen. Overview of the film properties and electromigration; Epitaxial continuity at the aluminum/TiN interface; Structural properties of the TiN mutilayered aluminum interconnection and its EM characteristics.

SrVO[sub 3] films were grown by laser molecular beam epitaxy on LaAlO[sub 3] substrates. For a 10-nm-thick film, its resistivity could be reduced by a factor of 4 by inserting a single La-O atomic layer on an oxygen-annealed LaAlO[sub 3] substrate. X-ray diffraction and x-ray photoelectron spectroscopy measurements revealed that oxygen defect concentrations could be varied significantly by controlling the substrate terminations, i.e., interface chemistry. It was suggested that the interface chemistry could influence formation of extended defects and result in changes in electrical properties. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]