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We have theoretically explored the electronic and thermoelectric properties of the C2P4 monolayer with the interface of density functional theory and semi-classical transport theory. Our calculation shows a high Seebeck coefficient and low electronic thermal conductivity in the vicinity of zero chemical potential (μ = 0), resulting in a good power factor (PF) and a high figure of merit (ZT). More particularly, the electronic figure of merit (ZTe) exhibits two high peak values around μ = 0 due to the significant contribution of thermoelectric parameters. Furthermore, ZTe decreases by increasing the temperature, giving a peak value of 0.98 in the negative chemical potential (μ), whereas, for μ > 0, the peak value increases slightly with temperature. Additionally, the ZTe peak value is robust against ±10% of uni- and biaxial strains at room temperature. To make our calculation more realistic, we add phonon contributions to the thermal conductivity in pristine C2P4 and calculate the total ZT. We have found that phonon contribution dominates at low temperatures, and the ZT peak is reduced to 0.78. These optimal thermoelectric parameters of the C2P4 monolayer may be suitable for demonstrating the feasibility of a good thermoelectric material. [ABSTRACT FROM AUTHOR]

We study the effect of substrate induced strain on the structural, transport, optical, and electronic properties of Sr 2 CoNbO 6 double perovskite thin films. The reciprocal space mapping, ϕ -scan, and high-resolution θ –2 θ scans of x-ray diffraction patterns suggest the epitaxial nature and high-quality of the films deposited on various single crystal ceramic substrates. A systematic enhancement in the dc electronic conductivity is observed with an increase in the compressive strain while there is a sharp reduction in the case of tensile strain, which is further supported by a change in the activation energy and the density of states near the Fermi level. The optical bandgap extracted from two distinct absorption bands, observed in the visible–near infrared spectroscopy, shows a non-monotonic behavior in the case of compressive strain while there is significant enhancement with tensile strain. Unlike the bulk Sr 2 CoNbO 6 (Co 3 + and Nb 5 + ), we observe different valence states of Co, namely, 2+, 3+, and 4+, and tetravalent Nb (4 d 1) in the x-ray photoemission spectroscopy measurements. Moreover, a reduction in the average oxygen valency with the compressive strain due to enhancement in the covalent character of Co/Nb–O bond is evident. Interestingly, we observe sharp Raman active modes in these thin films, which indicates a significant enhancement in structural ordering as compared to the bulk. [ABSTRACT FROM AUTHOR]

Near complete exfoliation and reduction of lyophilized graphene oxide (GO) has been carried out at temperature as low as 400 °C. The structural characterizations of the reduced GO have been performed using X-ray diffraction, Fourier transform infrared spectroscopy, and Raman spectroscopy techniques. The morphological studies were carried out using scanning electron microscopy. The synthesized GO finds an application in improving the switching performance of a liquid crystal (LC) mixture by remarkably modifying the physical properties, such as spontaneous polarization and rotational viscosity of the ferroelectric LC (FLC) material which in turn resulted into faster response of the FLC. The present study explores the possibility of low temperature thermal reduction of GO along with its application in improving the properties of LC based display systems. [ABSTRACT FROM AUTHOR]

Microplasma-assisted gas-phase nucleation has emerged as an important new approach to produce high-purity, nanometer-sized, and narrowly dispersed particles. This study aims to integrate this technique with vacuum conditions to enable synthesis and deposition in an ultrahigh vacuum compatible environment. The ultimate goal is to combine nanoparticle synthesis with photoemission spectroscopy-based electronic structure analysis. Such measurements require in vacuo deposition to prevent surface contamination from sample transfer, which can be deleterious for nanoscale materials. A homebuilt microplasma reactor was integrated into an existing atomic layer deposition system attached to a surface science multi-chamber system equipped with photoemission spectroscopy. As proof-of-concept, we studied the decomposition of ferrocene vapor in the microplasma to synthesize iron oxide nanoparticles. The injection parameters were optimized to achieve complete precursor decomposition under vacuum conditions, and nanoparticles were successfully deposited. The stoichiometry of the deposited samples was characterized in situ using X-ray photoelectron spectroscopy indicating that iron oxide was formed. Additional transmission electron spectroscopy characterization allowed the determination of the size, shape, and crystal lattice of the particles, confirming their structural properties. [ABSTRACT FROM AUTHOR]

High aspect ratio (HAR) silicon etch is reviewed, including commonly used terms, history, main applications, different technological methods, critical challenges, and main theories of the technologies. Chronologically, HAR silicon etch has been conducted using wet etch in solution, reactive ion etch (RIE) in low density plasma, single-step etch at cryogenic conditions in inductively coupled plasma (ICP) combined with RIE, time-multiplexed deep silicon etch in ICP-RIE configuration reactor, and single-step etch in high density plasma at room or near room temperature. Key specifications are HAR, high etch rate, good trench sidewall profile with smooth surface, low aspect ratio dependent etch, and low etch loading effects. Till now, time-multiplexed etch process is a popular industrial practice but the intrinsic scalloped profile of a time-multiplexed etch process, resulting from alternating between passivation and etch, poses a challenge. Previously, HAR silicon etch was an application associated primarily with microelectromechanical systems. In recent years, through-silicon-via (TSV) etch applications for three-dimensional integrated circuit stacking technology has spurred research and development of this enabling technology. This potential large scale application requires HAR etch with high and stable throughput, controllable profile and surface properties, and low costs. [ABSTRACT FROM AUTHOR]

Low temperature photoluminescence and optical absorption studies on 200 MeV Ag+15 ion irradiated Co-implanted ZnO thin films were studied. The Co clusters present in as implanted samples were observed to be dissolved using 200 MeV Ag+15 ion irradiation with a fluence of 1×1012 ions/cm2. The photoluminescence spectrum of pure ZnO thin film was characterized by the I4 peak due to the neutral donor bound excitons and the broad green emission. The Co-doped ZnO films show three sharp levels and two shoulders corresponding to 3t2g and 2eg levels of crystal field splitted Co d orbitals, respectively. The ultraviolet-visible absorption spectroscopy also shows the systematic variation of band gap after 200 MeV Ag+15 ion irradiation. [ABSTRACT FROM AUTHOR]

The different technological methods, critical challenges and main theories of the technologies of the high aspect ratio (HAR) silicon etch are analyzed. HAR silicon etch is an application associated with microelectromechanical systems and the application for three-dimensional integrated circuit required HAR etch with high and stable throughput, controllable profile and surface properties.

Presents a study which examined the structure of thin films of amorphous chalcogenide and bulk alloys deposited at various angles of incidence and the photostructural changes occurring therein on illumination with ultraviolet light using far-infrared spectroscopy and x-ray photoelectron spectroscopy. Magnitude of the photostructural changes; Influence of the composition and structural units on the photostructural changes; Changes in the band intensities.