Search

The intensities of infrared absorption due to the asymmetric stretching vibrations of interstitial oxygen atoms in Ge crystals enriched with 16O and 18O isotopes have been compared with oxygen concentrations determined by means of secondary ion mass spectrometry. For Ge samples with oxygen content less than 5×1017 cm-3, a good correlation has been found between the values of oxygen concentration and the values of the absorption coefficient at the maximum of the 16Oi related absorption band at 855.6 cm-1 with a proportionality coefficient CO=1.05×1017 cm-2. [ABSTRACT FROM AUTHOR]

Presents a study that correlated two groups of infrared (IR) localized vibrational bands with IR electronic bands due to the thermal double (TD) donors and the TD concentration from resistivity measurements. Experiment conducted; Results; Discussion.

Investigate thermal donor (TD) formation in silicon at various temperatures. Techniques being used to study defects in semiconductors; Information on the thermal history of the material for TD formation; Discussion on the electrical activity and atomic models of the thermal donors; Average number of oxygen atoms in TD; Annihilation.

Examines the generation of divacancy centers by irradiating silicon samples doped with tin and phosphorus at room temperature by 2.0 MeV electrons. Analysis of the samples using low-temperature infrared absorption measurements and deep level transient spectroscopy; Annihilation of vacancy-phosphorus centers by silicon self-interstitials; Preparation of the sample used.

Presents a study that investigated the precipitation of oxygen for 2 megaelectronvolt electron irradiated silicon samples with irradiation doses. Presence of different concentrations of the vacancy-dioxygen center created at the irradiation in the samples; Irradiation dose dependence of the incubation time and oxygen decay rate for the precipitation process; Explanation for the enhanced precipitation among vacancy-dioxygen samples.

Presents a study that investigated the defects introduced by reactive-ion etching and plasma etching using deuterium in boron-doped silicon with the photoluminescence technique. Photoluminescence measurements; Secondary-ion mass spectrometry analysis; Shifts in the energy position of the boron bound exciton due to the dry etching treatments.

Presents a study that examined the effects of reactive-ion etching and deuterium plasma etching on the electrical properties of silicon wafers. Measurement of the capacitance-voltage properties; Comparison of the results from reactive-ion etching and plasma etching; Analysis of the secondary mass ion spectra.

Presents a study that utilized different measurement techniques, both electrical and optical, to characterize gold (Au) diffusion in n-type float-zoned silicon (Si). Temperature range by Si was measured; Introduction of Au acceptor state; Effects of Au diffusion on the free-carrier concentration and mobilities.

Presents a study which examined the isothermal annealing of electron-irradiated Czochralski silicon samples using deep-level transient spectroscopy and photoluminescence. Background on Czochralski silicon; Experimental setup; Results and conclusions.

Presents the results of photoluminescence studies on silicon-fluorine (SF)/oxygen (O) plasma-induced defect formation in silicon samples. Discussion on ion bombardment of silicon surface during SF reactive-ion etching (RIE); Role of oxygen during SF/O RIE in photoluminescence; Importance of RIE in the manufacturing of submicron microelectronics devices.

Presents a study which examined the impact of reactive-ion-etching (RIE) on the near-surface crystal quality of Czochralski silicon by photoluminescence (PL) spectroscopy. Experimental procedure; Record of the PL spectra of boron-doped silicon surfaces; Approaches to reduce the introduction of reactive-ion-etching-related defects.

Examines the photoluminescence characterization of plasma exposed silicon surfaces. Investigation on Czochralski or float-zone-grown silicon crystals; Details on the effect of various etching gases on the luminescence spectra; Effects of subsequent annealings; Observation on the two types of recombination process.

Presents a study that monitored the presence of electrically active defects in carbon[sup+] and CO[sup+] implanted boron-doped silicon using deep level transient spectroscopy and resistivity measurements. Introduction of defects by annealing; Correlation of the traps detected in the samples with multi-oxygen- and carbon-related complexes; Exponential capacitance transients following the injection pulses.

Presents a study which examined the effect of reactive-ion etching and plasma etching using deuterium on the electrical properties of boron-doped p-type silicon employing junction capacitance measurements on Schottky diodes. Experimental procedure followed; Theory of data analysis; Results of the study.

Presents a study which examined deep level defects and their role in carrier recombination processes in electron-irradiated 3C silicon carbide using photoluminescence and optically detected magnetic resonance. Principle behind the technique; Brief background on the sample material; Description of the experimental setup; Findings.