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Amorphous nitrogenated carbon (a-CN(sub x)) films are prepared from a mixture of acetylene and nitrogen gas in electron cyclotron resonance plasma and characterized by electron energy-loss spectroscopy (EELS), spectroscopic ellipsometry (SE), Fourier transformed infrared (FTIR) spectroscopy. The results show that the incorporation of nitrogen does not increase the graphitization of the nitrogenated carbon films prepared from acetylene, unlike that seen from methane-based films.

Ni was deposited on strained and relaxed Si(100) n-type substrates to investigate the effect of strain on the formation and stability of NiSi. Strained Si substrates were fabricated by depositing a pseudomorphic silicon film on a 3000 angstrom thick relaxed Si0.8Ge0.2 film. A characteristic cross-hatched pattern was determined. The sheet resistance of the silicide formed on strained silicon remained stable up to 700 deg C while the sheet resistance of the silicide formed on bulk silicon (100) significantly increased at 600 deg C.

Measurements were made on the 295 K powder neutron diffraction patterns and the temperature dependence of the Mossbauer spectra of Nd2Fe17-xTix and Nd2Fe17-xTixNy. Rietveld refinement of the neutron diffraction patterns yielded the Nd2Fe16.32Ti0.68 and Nd2Fe16.32Ti0.68N2.7 stoichiometries for the two compounds which indicated that titianium occupies only the 6c crystallographic site and nitrogen only the 9e site in the Th2Zn17 structure. The insertion of interstitial nitrogen into Nd2Fe16.32Ti0.68 produced a 6.8% increase in the unit cell volume.

Lower-limit concentration of active N atoms stored in a cryomatrix has been found using Fourier transform infrared (FTIR) spectroscopic measurements. Bombardment of the matrix by N and N(sub.2) neutrals with energies estimated to be 20 - 120 eV gives a concentration of N(sub.3) radicals proportional to the beam flux in a linear fashion.

A physical insight into the origins of the contradictions of Vegard's Law, using a batch of GaAsN samples specially grown by a solid source molecular beam epitaxy (SSMBE) is provided. The analysis reveals that the nitrogen-related point defects have a significant influence on the determination of nitrogen composition of GaAsN material, and N-N airs and present as predominant nitrogen-related defects in GaAsN especially, with high nitrogen composition.

Damage effects that are produced by ion implantation of medium-light element like nitrogen, oxygen and fluorine was performed on lithium niobate crystals by varying the implant done and substrating the temperature. The study revealed a damage pileup compatible with a growth of three-dimensional defect clusters.

The growth of single crystal InN on sapphire substrates with aluminum nitride (AIN) buffer layer using the solid-source molecular-beam epitaxy technique is reported. The photoluminescence (PL) measurements showed the InN sample has band gap of ~0.76 eV at room temperature.

A sputter-deposited Al2O3/HfO2 stack as a blocking layer of metal-oxide-nitride-oxide-silicon capacitors is investigated. The study shows that the improvement of electrical characteristics can be explained by lower leakage current density and less voltage drop of high-k blocking layer which in turn increase the effective thickness of tunneling oxide.

Nitrogen incorporation behavior in GaNAs bulk layers and GaInNAs quantum wells (QWs), grown by metalorganic chemical vapor deposition is discussed. The optical quality of the quantum wells is linked to the abruptness of the QWs and the nitrogen content.

N incorporation behaviors are investigated using a series of samples grown at different growth rates, As4/Ga ratios, and nitrogen fluxes within a growth temperature range from 420 to 560 degree C. The incorporation behavior of N in GaAsN grown at higher growth rates are found to be very different from that grown at lower growth rates.

The effect of microstructure of TiN films on the diffusion behavior of Cu is investigated. Cu/TiN films were synthesized on Si(100) substrate by the pulsed laser deposition technique. Polycrystalline samples showed the maximum diffusion of Cu in TiN films compared with single crystalline and nanocrystalline TiN films due to the columnar grains proving a direct diffusion path.

A study was conducted to investigate the stability of nitrogen-oxygen complexes, by subjecting silicon samples containing these complexes to rapid thermal heat treatments at several temperatures and for varying times and monitoring the relative absorption by the complexes and the nitrogen pairs. The result reveals that the complexes begin to dissociate rapidly for temperatures above 700 degree Centigrade.

An experiment was conducted to calculate the concentration dependent diffusion coefficient for austenitic stainless steel samples implanted with nitrogen concentration. The result shows a steep increase of the diffusivity at a certain nitrogen concentration, depending on the sample and the ion species.

The nitrogen depth profile, structure, and chemical composition in the modified surface layer were determined by nuclear reaction analysis (NRA) and x-ray diffraction (XRD). Experimental results support the specific role of chromium in the mechanisms of atomic transport of nitrogen over long distances at moderate temperature in austenitic stainless steel.

Epitaxial NbN/MgO/NbN tunnel junctions are fabricated with good tunneling characteristics in the range of J(sub C) = 0.2-70 kA/cm(super 2). In the range of J(sub C) = 0.2-15 kA/cm(super 2), the tunnel junctions had large gap voltages (5.6-5.9 mV), narrow gap widths, high I(sub C)R(sub N) products, and small subgap leakage currents (40-96 mV).