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The complex refractive indices of formamidinium cesium lead mixed-halide [FA0.83Cs0.17Pb(I1–xBrx)3] perovskite thin films of compositions ranging from x = 0 to 0.4, with both flat and wrinkle-textured surface topographies, are reported. The films are characterized using a combination of variable angle spectroscopic ellipsometry and spectral transmittance in the wavelength range of 190 nm to 850 nm. Optical constants, film thicknesses and roughness layers are obtained point-by-point by minimizing a global error function, without using optical dispersion models, and including topographical information supplied by a laser confocal microscope. To evaluate the bandgap engineering potential of the material, the optical bandgaps and Urbach energies are then accurately determined by applying a band fluctuation model for direct semiconductors, which considers both the Urbach tail and the fundamental band-to-band absorption region in a single equation. With this information, the composition yielding the optimum bandgap of 1.75 eV for a Si-perovskite tandem solar cell is determined. [ABSTRACT FROM AUTHOR]

Research was conducted to examine the influence of excitation frequency, temperature, and hydrogen dilution on the stability of plasma enhanced chemical vapor deposited hydrogenated amorphous silicon (a-Si:H). Growth rates at comparable plasma power are presented for substrate temperatures between 100 to 300 degrees C and for several H2 dilution ratios. Results indicate that very high frequency clearly favors microcrystalline growth.

Liquid phase crystallized Si thin-film solar cells on nanoimprint textured glass substrates exhibiting two characteristic, but distinct different surface structures are presented. The impact of the substrate texture on light absorption, the structural Si material properties, and the resulting solar cell performance is analyzed. A pronounced periodic substrate texture with a vertical feature size of about 1 μm enables excellent light scattering and light trapping. However, it also gives rise to an enhanced Si crystal defect formation deteriorating the solar cell performance. In contrast, a random pattern with a low surface roughness of 45 nm allows for the growth of Si thin films being comparable to Si layers on planar reference substrates. Amorphous Si/crystalline Si heterojunction solar cells fabricated on the low-roughness texture exhibit a maximum open circuit voltage of 616mV and internal quantum efficiency peak values exceeding 90%, resulting in an efficiency potential of 13.2%. This demonstrates that high quality crystalline Si thin films can be realized on nanoimprint patterned glass substrates by liquid phase crystallization inspiring the implementation of tailor-made nanophotonic light harvesting concepts into future liquid phase crystallized Si thin film solar cells on glass. [ABSTRACT FROM AUTHOR]

This study is concerned with the topography of nanostructures consisting of arrays of polycrystalline nanodots. Guided by transmission electron microscopy (TEM) measurements of crystalline Si (c-Si) nanodots that evolved from a "dewetting" process of an amorphous Si (a-Si) layer from a SiO2 coated substrate, we investigate appropriate formulations for the surface energy density and transitions of energy density states at grain boundaries. We introduce a new numerical minimization formulation that allows to account for adhesion energy from an underlying substrate. We demonstrate our approach first for the free standing case, where the solutions can be compared to well-known Wulff constructions, before we treat the general case for interfacial energy settings that support "partial wetting" and grain boundaries for the polycrystalline case. We then use our method to predict the morphologies of silicon nanodots. [ABSTRACT FROM AUTHOR]

An analysis of the contact formation between degenerated n-type transparent conductive oxide (TCO) and p-type amorphous silicon (a-Si:H) as it is used for front side contacts in high efficiency a-Si:H/crystalline silicon (c-Si) heterojunction solar cells is presented. It is shown that the deposition of a TCO on a (p)a-Si:H emitter layer causes a reduction of charge carrier lifetime in low injection levels which leads to a lowering of the implied fill factor. Simulation based analysis of charge carrier lifetime and direct measurements by surface photovoltage reveals that TCO deposition induces a change of the c-Si band bending. The magnitude of this change depends on the (p)a-Si:H doping level. Both observations are explained by the impact of the TCO/a-Si:H work function difference on the c-Si band bending. Based on numerical simulations, the reduced injection-dependent band bending is identified as the reason for the reduced fill factor of final solar cells. [ABSTRACT FROM AUTHOR]

We present temperature-dependent measurements of I-V curves in the dark and under illumination in order to elucidate the dominant transport mechanisms in amorphous silicon-crystalline silicon (a-Si:H/c-Si) heterojunction solar cells. ZnO:Al/(p)a-Si:H/(n)c-Si/(n+)a-Si:H cells are compared with inversely doped structures and the impact of thin undoped a-Si:H buffer layers on charge carrier transport is explored. The solar cell I-V curves are analyzed employing a generalized two-diode model which allows fitting of the experimental data for a broad range of samples. The results obtained from the fitting are discussed using prevalent transport models under consideration of auxiliary data from constant-final-state-yield photoelectron spectroscopy, surface photovoltage, and minority carrier lifetime measurements. Thus, an in-depth understanding of the device characteristics is developed in terms of the electronic properties of the interfaces and thin films forming the heterojunction. It is shown that dark I-V curve fit parameters can unequivocally be linked to the open circuit voltage under illumination which opens a way to a simplified device assessment. [ABSTRACT FROM AUTHOR]

A postdeposition thermal treatment has been applied to sputtered Al-doped zinc oxide films and shown to strongly decrease the resistivity of the films. While high temperature annealing usually leads to deterioration of electrical transport properties, a silicon capping layer successfully prevented the degradation of carrier concentration during the annealing step. The effect of annealing time and temperature has been studied in detail. A mobility increase from values of around 40 cm2/Vs up to 67 cm2/Vs, resulting in a resistivity of 1.4×10-4 Ω cm has been obtained for annealing at temperatures of 650 °C. The high mobility increase is most likely obtained by reduced grain boundary scattering. Changes in carrier concentration in the films caused by the thermal treatment are the result of two competing processes. For short annealing procedures we observed an increase in carrier concentration that we attribute to hydrogen diffusing into the zinc oxide film from a silicon nitride barrier layer between the zinc oxide and the glass substrate and the silicon capping layer on top of the zinc oxide. Both are hydrogen-rich if deposited by plasma-enhanced chemical vapor deposition. For longer annealing times a decrease in carrier concentration can occur if a thin capping layer is used. This can be explained by the deteriorating effect of oxygen during thermal treatments which is well known from annealing of uncapped zinc oxide films. The reduction in carrier concentration can be prevented by the use of capping layers with thicknesses of 40 nm or more. [ABSTRACT FROM AUTHOR]

Polycrystalline silicon (poly-Si) thin films have been prepared by electron-beam evaporation and thermal annealing for the development of thin-film solar cells on glass coated with ZnO:Al as a transparent, conductive layer. The poly-Si microstructure and photovoltaic performance were investigated as functions of the deposition temperature by Raman spectroscopy, scanning and transmission electron microscopies including defect analysis, x-ray diffraction, external quantum efficiency, and open circuit measurements. It is found that two temperature regimes can be distinguished: Poly-Si films fabricated by deposition at low temperatures (Tdep<400 °C) and a subsequent thermal solid phase crystallization step exhibit 1–3 μm large, randomly oriented grains, but a quite poor photovoltaic performance. However, silicon films deposited at higher temperatures (Tdep>400 °C) directly in crystalline phase reveal columnar, up to 300 nm big crystals with a strong <110> orientation and much better solar cell parameters. It can be concluded from the results that the electrical quality of the material, reflected by the open circuit voltage of the solar cell, only marginally depends on crystal size and shape but rather on the intragrain properties of the material. The carrier collection, described by the short circuit current of the cell, seems to be positively influenced by preferential <110> orientation of the grains. The correlation between experimental, microstructural, and photovoltaic parameters will be discussed in detail. [ABSTRACT FROM AUTHOR]

The influence of oxygen and nitrogen impurities on the performance of thin-film solar cells based on microcrystalline silicon (μc-Si:H) has been systematically investigated. Single μc-Si:H layers and complete μc-Si:H solar cells have been prepared with intentional contamination by admitting oxygen and/or nitrogen during the deposition process. The conversion efficiency of ∼1.2 μm thick μc-Si:H solar cells is deteriorated if the oxygen content in absorber layers exceeds the range from 1.2×1019 to 2×1019 cm-3; in the case of nitrogen contamination the critical impurity level is lower ([N]critical=6×1018–8×1018 cm-3). It was revealed that both oxygen and nitrogen impurities thereby modify structural and electrical properties of μc-Si:H films. It was observed that the both contaminant types act as donors. Efficiency losses due to oxygen or nitrogen impurities are attributed to fill factor decreases and to a reduced external quantum efficiency at wavelengths of >500 nm. In the case of an air leak during the μc-Si:H deposition process, the cell performance drops at an air leak fraction from 140 to 200 ppm compared to the total gas flow during i-layer deposition. It is demonstrated that oxygen and nitrogen impurities close to the p/i-interface have a stronger effect on the cell performance compared to impurities close to the n/i-interface. Moreover, thick μc-Si:H solar cells are found to be more impurity-sensitive than thinner cells. [ABSTRACT FROM AUTHOR]

This study addresses the electrical and optical properties of radio frequency magnetron sputtered aluminum doped zinc oxide (ZnO:Al) films. The main focus was on the improvement in carrier mobility μ to achieve simultaneously high transparency for visible and particularly near-infrared light and low resistivity. The influence of Al concentration in the target, film thickness, sputter power, deposition pressure, and substrate temperature on material properties was investigated. The structural, compositional, electrical and optical properties were studied using x-ray diffraction, secondary ion mass spectrometry (SIMS), room temperature Hall effect measurements and spectral photometry, respectively. All ZnO:Al films were polycrystalline and preferentially oriented along [002]. The grain size along the direction of growth increased with higher Al doping and with increasing film thickness. The SIMS measurements revealed that the Al concentration in the film was nearly the same as in the target. Carrier concentration N and mobility μ are determined by the target Al concentration. In addition μ is influenced by the film thickness and the sputter pressure. For each Al concentration, the highest μ was generally observed at low deposition pressures. By using a target with low Al[sub 2]O[sub 3] concentration of 0.5 wt %, μ could be improved up to 44.2 cm[sup 2]/V s while maintaining the electrical resistivity ρ as low as 3.8×10[sup -4] Ω cm. For these films the transparency in the near-infrared wavelength range strongly improved which makes them particularly interesting for the application in optoelectronic devices like thin-film solar cells. The μ-N dependence for films deposited under diverse conditions was studied to identify a practical limit for μ. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

A nanoscopic kinetic model of controlled plasma-assisted microcrystallite formation (PAµCF) of Si in pre deposited a-Si:H films at low temperatures is proposed. The model suggests mechanisms for enhancement of the Si crystallization in a-Si:H films at low temperatures by treatment of the films in plasma. The model reveals certain kinetic advantages of hydrogen plasmas for the formation of Si crystalline nuclei in a-Si:H compared to other plasmas (Ar plasma, etc.). These advantages make the hydrogen plasma substantially more efficient in the PAµCF of Si in a-Si:H films. The proposed mechanism for PAµCF of Si is associated with the formation on the surface of the a-Si:H film and in the adjacent nanometer material layer of nanoscale (picosecond) short-lived hot spots of high energy density (or effective temperature). The hot spots are generated in the material by energetic plasma ions of energy ε[sub is] = 20-100 eV accelerated by the electrical field in the thin plasma layer near the solid surface. The hot spots promote Si crystallization in a-Si:H. It is shown how the plasma composition, energy, mass, and fluxes of the plasma ions impinging on the surface of the a-Si:H film determine the Si nucleation rate and density of Si microcrystallization. [ABSTRACT FROM AUTHOR]

The electrical and optical properties of radio frequency magnetron sputtered aluminum doped zinc oxide (ZnO:Al) films are addressed. The improvement in carrier mobility mu to achieve simultaneously high transparency for visible and particularly near-infrared light and low resistivity is focused.

Research is done on absorption losses at a nanorough silver back reflector of a solar cell, which were calculated with high accuracy by photothermal deflection spectroscopy. In conclusion, two series of silver back reflectors (one covered with thin ZnO layer) were examined and their absorption related to surface morphology.