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We present a novel method of modeling the contact between a metal and a two-dimensional semiconductor. Using Au on MoS 2 as an example, we self-consistently solve the Schrödinger and Poisson equations and obtain the charge density in the contact. We consider open boundary conditions using the quantum transmitting boundary method and model the electron current through the contact region. We then investigate the effect of effective Schottky barrier height, electrostatic doping, and length of the overlap region on the contact resistance in a top contact geometry. By using data from experiments or from ab initio calculations for the fitting of parameters, such as the effective Schottky barrier height, the model can be used to efficiently obtain the contact resistance and, therefore, the quality of the contact. Furthermore, we investigate the effect of sampling of the Brillouin zone in the transverse direction on the numerical calculation of key quantities, such as contact resistance and free charge density. Additionally, we show that the boundary conditions applied to the Poisson equation during the calculation of the free charge density have a significant impact on the calculated contact resistance and that the impact is more pronounced in heterostructures with a larger Schottky barrier. We found that the contact resistance may be significantly underestimated, by up to one order of magnitude, when the height of the simulation domain is not large enough. [ABSTRACT FROM AUTHOR]

Empirical pseudopotentials (EPs) allow for accurate and efficient modeling of atomistic electron transport. Unfortunately, EPs are available only for a few materials and atomic configurations. Furthermore, EPs for nanostructures have historically been described using a variety of different parameterized forms. To compete with more general first-principles methods, we propose an automated workflow to generate EPs of a general form for any material and atomistic configuration. In particular, we focus on the generation of EPs for electron transport calculations, i.e., we provide an EP that accurately reproduces a reference band structure. To demonstrate the applicability of the proposed method, we generate the EPs to reproduce the band structure for bulk Si , Ge , 3C– SiC (zinc-blende polytype), 4H– SiC (hexagonal polytype), diamond, and hydrogen terminated ⟨ 100 ⟩ oriented Si and Ge thin films, calculated using first principles. In addition, using the generated EPs, along with the virtual crystal approximation, we demonstrate that our method reproduces accurately the band structure related properties of Si 1 − x Ge x alloy as a function of Ge mole fraction, x. As an application of our generated EPs, we perform ballistic quantum transport simulations of extremely scaled (≈ 0.6 nm wide), hydrogen terminated, ⟨ 100 ⟩ oriented Ge and Si gate-all-around nanowire field-effect transistors and compare their transfer characteristics. [ABSTRACT FROM AUTHOR]

A weakly coupled system of two crossed graphene nanoribbons exhibits direct tunneling due to the overlap of the wavefunctions of both ribbons. We apply the Bardeen transfer Hamiltonian formalism, using atomistic band structure calculations to account for the effect of the atomic structure on the tunneling process. The strong quantum-size confinement of the nanoribbons is mirrored by the one-dimensional character of the electronic structure, resulting in properties that differ significantly from the case of inter-layer tunneling, where tunneling occurs between bulk two-dimensional graphene sheets. The current-voltage characteristics of the inter-ribbon tunneling structures exhibit resonance, as well as stepwise increases in current. Both features are caused by the energetic alignment of one-dimensional peaks in the density-of-states of the ribbons. Resonant tunneling occurs if the sign of the curvature of the coupled energy bands is equal, whereas a step-like increase in the current occurs if the signs are opposite. Changing the doping modulates the onset-voltage of the effects as well as their magnitude. Doping through electrostatic gating makes these structures promising for application towards steep slope switching devices. Using the atomistic empirical pseudopotentials based Bardeen transfer Hamiltonian method, inter-ribbon tunneling can be studied for the whole range of two-dimensional materials, such as transition metal dichalcogenides. The effects of resonance and of step-like increases in the current we observe in graphene ribbons are also expected in ribbons made from these alternative two-dimensional materials, because these effects are manifestations of the one-dimensional character of the density-of-states. [ABSTRACT FROM AUTHOR]

In the quantum mechanical simulation of exploratory semiconductor devices, continuum methods based on a k ⋅ p/envelope function model have the potential to significantly reduce the computational burden compared to prevalent atomistic methods. However, full-zone k ⋅ p/envelope function simulation approaches are scarce and existing implementations are not self-consistent with the calculation of the electrostatic potential due to the lack of a stable procedure and a proper normalization of the multi-band envelope functions. Here, we therefore present a self-consistent procedure based on a full-zone spectral k ⋅ p/envelope function band structure model. First, we develop a proper normalization for the multi-band envelope functions in the presence of transmitting boundary conditions. This enables the calculation of the free carrier densities. Next, we construct a procedure to obtain self-consistency of the carrier densities with the electrostatic potential. This procedure is stabilized with an adaptive scheme that relies on the solution of Poisson's equation in the Gummel form, combined with successive underrelaxation. Finally, we apply our procedure to homostructure In 0.53 Ga 0.47 As tunnel field-effect transistors (TFETs) and staggered heterostructure GaAs 0.5 Sb 0.5 /In 0.53 Ga 0.47 As TFETs and show the importance of self-consistency on the device predictions for scaled dimensions. [ABSTRACT FROM AUTHOR]

The critical role of silicon and germanium in the semiconductor industry, combined with the need for extremely thin channels for scaled electronic devices, has motivated research towards monolayer silicon (silicene) and monolayer germanium (germanene). The lack of horizontal mirror (σh) symmetry in these two-dimensional crystals results in a very strong coupling—in principle diverging—of electrons to long wavelength flexural branch (ZA) phonons. For semi-metallic Dirac materials lacking σh symmetry, like silicene and germanene, this effect is further exacerbated by strong back-scattering at the Dirac cone. In order to gauge the intrinsic transport limitations of silicene and germanene, we perform low- and high-field transport studies using first-principles Monte-Carlo simulations. We take into account the full band structure and solve the electron-phonon matrix elements to treat correctly the material anisotropy and wavefunction overlap-integral effects. We avoid the divergence of the ZA phonon scattering rate through the introduction of an optimistic (1 nm long wavelength) cutoff for the ZA phonons. Even with this cutoff for long-wavelength ZA phonons, essentially prohibiting intravalley scattering, we observe that intervalley ZA phonon scattering dominates the overall transport properties. We obtain relatively large electron mobilities of 701 cm2 V−1 s−1 for silicene and 2327 cm2 V−1 s−1 for germanene. Our results show that silicene and germanene may exhibit electronic transport properties that could surpass those of many other two-dimensional materials, if intravalley ZA phonon scattering could be suppressed. [ABSTRACT FROM AUTHOR]

In tunnel field-effect transistors, trap-assisted tunneling (TAT) is one of the probable causes for degraded subthreshold swing. The accurate quantum-mechanical (QM) assessment of TAT currents also requires a QM treatment of phonon-assisted tunneling (PAT) currents. Therefore, we present a multi-band PAT current formalism within the framework of the quantum transmitting boundary method. An envelope function approximation is used to construct the electron-phonon coupling terms corresponding to local Fröhlich-based phonon-assisted inter-band tunneling in direct-bandgap III-V semiconductors. The PAT current density is studied in up to 100 nm long and 20 nm wide p-n diodes with the 2- and 15-band material description of our formalism. We observe an inefficient electron-phonon coupling across the tunneling junction. We further demonstrate the dependence of PAT currents on the device length, for our non-self-consistent formalism which neglects changes in the electron distribution function caused by the electron-phonon coupling. Finally, we discuss the differences in doping dependence between direct band-to-band tunneling and PAT current. [ABSTRACT FROM AUTHOR]