1. Axial silicon-germanium nanowire heterojunctions: Structural properties and carrier transport
- Author
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X. Wang, Xiaohua Wu, David J. Lockwood, Leonid Tsybeskov, and Theodore I. Kamins
- Subjects
010302 applied physics ,Materials science ,business.industry ,Nanowire ,General Physics and Astronomy ,Heterojunction ,02 engineering and technology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,01 natural sciences ,Nanoclusters ,Silicon-germanium ,Condensed Matter::Materials Science ,chemistry.chemical_compound ,chemistry ,0103 physical sciences ,Band diagram ,Energy level ,Optoelectronics ,Flicker noise ,0210 nano-technology ,business ,Electronic band structure - Abstract
We analyzed structural and electrical properties of axial Si-Ge nanowire heterojunctions produced by the vapor-liquid-solid growth method using Au nanoclusters as catalysts. The observed nonlinear current-voltage characteristics, strong flicker noise, and damped current oscillations with frequencies of 20–30 MHz are explained using a proposed Si-Ge nanowire heterojunction energy band diagram that includes energy states associated with structural imperfections, as revealed by transmission electron microscopy.We analyzed structural and electrical properties of axial Si-Ge nanowire heterojunctions produced by the vapor-liquid-solid growth method using Au nanoclusters as catalysts. The observed nonlinear current-voltage characteristics, strong flicker noise, and damped current oscillations with frequencies of 20–30 MHz are explained using a proposed Si-Ge nanowire heterojunction energy band diagram that includes energy states associated with structural imperfections, as revealed by transmission electron microscopy.
- Published
- 2019
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