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Diffraction gratings are commonly used in optical instruments such as in spectrometers, monochromators, and wavelength division multiplexing devices. The diffraction efficiency is directly related to the ratio of the grating spacing or pitch to the wavelength of the light. In a sinusoidal grating (or holographic grating) the efficiency is generally lower than a blazed grating with a saw tooth profile, but the spectral coverage can be broader. To address a large spectral range, advanced spectrometers use a number of diffraction gratings with a fixed pitch. In this paper, we show for the first time, the use of a tunable-frequency surface acoustic wave (SAW) delay line as a broad-band sinusoidal diffraction grating. To tune the frequency, we tune the effective spacing of the interdigitated transducers (IDTs) by applying specific phases to each IDT finger. The prototype SAW grating covers frequency range of 86 MHz to 360 MHz corresponding to optical range of $1.3~\mu \text{m}$ to $9~\mu \text{m}$ . [2020-0189]

In this paper, we present ultra-high quality factor ( ${Q}$ ) SAW resonators fabricated on aluminum gallium nitride on gallium nitride on silicon (AlGaN/GaN/Si) heterostructures with ${Q}$ exceeding 6000 at room temperature. We characterize their temperature response in a broad range of temperature (−196°C to 500°C or 77 K to 773 K). The effect of doping on the ${Q}$ and temperature coefficient of frequency (TCF) of the GaN-based SAW resonators is analyzed, for the first time, using un-intentionally doped GaN (UID-GaN), carbon doped GaN (C-doped), and Si doped GaN. The ${Q}$ value for UID-GaN and C-doped GaN is similar and decreases from 2000 to 1000 as the temperature is increased from 77 K to 773 K. The ${Q}$ value of Si-doped GaN is higher than UID and C-doped GaN by a factor of 3 (6622 at 77 K) and decreases with increase of temperature. This value of ${Q}$ at 1.8 GHz is the highest reported amongst aluminum nitride (AlN) or GaN-based SAW resonators. For extreme high temperatures (≥573 K) the TCF value is half the TCF value of UID and C-doped GaN, which shows the possibility of engineering the TCF by tuning the doping concentration. For low temperatures (≤150 K) C-doped and UID-GaN show a turn over point in TCF curve which shows their promise for cold clocks. [2020-0163]

This paper reports on the investigation of anomalous low quality factors ( ${Q}\text{s}$ ) in AlN thin film-based length extensional (LE)-mode resonators using finite element method (FEM), analytical modeling, and experimental techniques. Different heterostructures of LE resonators having Al/AlN/Si, Al/AlN, AlN/Si, and Si are designed and fabricated using standard MEMS processes. Experimental ${Q}\text{s}$ along with resonances are obtained using electrical and optical readout and are compared with the modeled and analytically obtained ${Q}\text{s}$ . The results show that the thermoelastic damping (TED) in metal electrode, anchor loss, and charge redistribution loss are not the dominant loss mechanisms. With the help of Mason’s network modeling, we investigated the dielectric loss, which is also observed to be negligible for these resonators. An internal mechanical loss, originating from the columnar growth of AlN and observed using Mason’s model, is proved to be the dominant loss mechanism. This observation is confirmed and reinforced by the COMOSL’s FEM analysis of TED in AlN, having columnar growth effect and by experimental results. [2018-0258]

The 20th in the series of Solid-State Sensors, Actuators, and Microsystems Hilton Head Workshops was scheduled for May 31–June 4, 2020, at the Sonesta Resort on Hilton Head Island, SC, USA. Unfortunately, like most academic conferences in 2020, it was canceled due to the COVID-19 pandemic. The Hilton Head 2020 Workshop ( https://www.hh2020.org/ ) was designed to continue to represent the science and engineering excellence of the MEMS community while introducing a number of innovations to the structure of this historic meeting. Some of these changes included the workshop becoming an international meeting for the first time while remaining committed to its key mission of excellence in showcasing recent innovative work and offering strong networking opportunities. We would have had new representatives from multiple regions in North America on our Technical Program Committee (TPC) and a strong focus on cultivating the impact of MEMS on global issues and grand challenges (including a full-day short course on “Microsystems Frontiers in the IoT Era”).

In this paper, design, analysis, and implementation of a piezoelectric microelectromechanical systems (MEMS) oscillator on an ovenized microplatform is presented. An oxide-refill process is used to compensate the first-order temperature coefficient of frequency of MEMS resonators, as well as to realize thermal isolation structures. The technology enables fabrication of low-power ovenized device fusion platforms using standard silicon on insulator wafers. Utilizing the intrinsic frequency-temperature characteristic of two MEMS resonators, temperature sensing and closed-loop oven-control is realized by phase-locking two MEMS oscillators at an oven-set temperature. The design of the phase-lock control loop is studied using multidomain linear models. Control loop dynamics, noise properties, and nonideal effects are analyzed. Low-power and low-noise phase-locked loop-based control circuitry is designed in 0.18- $\mu \text{m}$ CMOS to interface with the MEMS resonators. Using the developed technology, an oven controlled MEMS oscillator exhibits an overall frequency drift of

In this letter, we present ultra-high frequency coupled ring resonators realized in a suspended AlGaN/GaN heterostructure. The piezoelectric transducers consist of back-to-back nickel (Ni) Schottky diodes deposited on a 20-nm-thick AlGaN layer and a floating 2-D electron gas (2-DEG) sheet at the AlGaN/GaN interface. The dispersion characteristics of symmetric and anti-symmetric Lamb waves in ring resonators are characterized. Higher order resonance harmonics are targeted with very high mechanical quality factors ( $Q\text{s}$ ) through optimized design of the coupling beam. Such a scheme minimizes the acoustic energy leakage to the substrate, and thus increases anchor $Q$ . We report on a high-order breathing resonance mode at 900.7 MHz with very high mechanical $Q$ of 8350 measured at room temperature and ambient pressure, achieving a record high frequency $\times Q$ value of $7.5\times 10^{12}$ . [2017-0064]

Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular material after silicon in the semiconductor industry. The prime movers behind this trend are LEDs, microwave, and more recently, power electronics. New areas of research also include spintronics and nanoribbon transistors, which leverage some of the unique properties of GaN. GaN has electron mobility comparable with silicon, but with a bandgap that is three times larger, making it an excellent candidate for high-power applications and high-temperature operation. The ability to form thin-AlGaN/GaN heterostructures, which exhibit the 2-D electron gas phenomenon leads to high-electron mobility transistors, which exhibit high Johnson's figure of merit. Another interesting direction for GaN research, which is largely unexplored, is GaN-based micromechanical devices or GaN microelectromechanical systems (MEMS). To fully unlock the potential of GaN and realize new advanced all-GaN integrated circuits, it is essential to cointegrate passive devices (such as resonators and filters), sensors (such as temperature and gas sensors), and other more than Moore functional devices with GaN active electronics. Therefore, there is a growing interest in the use of GaN as a mechanical material. This paper reviews the electromechanical, thermal, acoustic, and piezoelectric properties of GaN, and describes the working principle of some of the reported high-performance GaN-based microelectromechanical components. It also provides an outlook for possible research directions in GaN MEMS.

This paper presents the analysis, design, fabrication, and the first measured results demonstrating the use of gallium nitride (GaN)-based micromechanical resonator arrays as high-sensitivity, low-noise infrared (IR) detectors. The IR sensing mechanism is based on monitoring the change in the resonance frequency of the resonators upon near IR radiation. The resonators are characterized for their RF and thermal performance and exhibit a radiant responsivity of 1.68%/W, thermal time constant on the order of 556 μs, and an average IR responsivity of -1.5% when compared with a reference resonator, for a 100 mK radiation-induced temperature rise. An analysis of the design of the devices is presented as a path toward better design, specifically, for low thermal noise equivalent temperature difference in the long wavelength IR spectrum.

We report on the characterization of thin-film near and short wavelength infrared absorbers comprised of carbon nanotubes dispersed in a polymer. Charged nanodiamond particles are used to effectively and uniformly disperse the carbon nanotubes in the polymer matrix, leading to a very homogenous film. Using this new technique, we demonstrate an infrared absorption of up to 95% in films with thicknesses . This remarkably high absorption is the result of low reflection off the surface and high absorption across the film thickness. The complex refractive index of the films is extracted using an effective media approximation. Calculations show the film has a wide angle for high absorption and is polarization independent. These films are easy to fabricate, robust and damage-resistant, and are compatible with post-processing techniques. These films can be used as the coating layer to boost the efficiency of uncooled infrared sensors and solar-thermal energy harvesters.

In this paper, we explore the piezoelectric transduction of in-plane flexural-mode silicon resonators with a center frequency in the range of 1.3-1.6 MHz. A novel technique utilizing oxide-refilled trenches is implemented to achieve efficient temperature compensation. These trenches are encapsulated within the silicon resonator body so as to protect them during the device release process. By using this method, we demonstrate a high-Q (> 19 000) resonator having a low temperature coefficient of frequency of

This paper presents a fully integrated tunable lumped filter on silicon using a low-temperature silver micromachining process. A prototype 836-MHz bandpass filter with a 3-dB bandwidth of 5.9% and insertion loss of 4.8 dB is demonstrated in a second-order coupled-resonator configuration. Continuous tuning of 50 MHz is achieved by electrostatically actuating the lateral air-gap capacitors of the filter. To control the bandwidth while tuning the center frequency, reconfigurable termination impedance is proposed. As a proof of concept, a low-noise amplifier with tunable input impedance is designed to interface with the bandpass filter. The tunable impedance is realized at the input of the low-noise amplifier using a shunt positive metal-oxide-semiconductor transistor. The fabrication, design, and measurement results of the filter are detailed, and future research directions to improve the performance of such filters are discussed.

This paper presents a new implementation of integrated tunable inductors using mutual inductances activated by micromechanical switches. To achieve a large tuning range and a high quality factor, silver was used as the structural material, and silicon was selectively removed from the backside of the substrate. Using this method, a maximum tuning of 47% at 6 GHz is achieved for a 1.1 nH silver inductor fabricated on a low-loss polymer membrane. The effect of the quality factor on the tuning characteristic of the inductor is investigated by comparing the measured result of identical inductors fabricated on various substrates. To maintain the quality factor of the silver inductor, the device was encapsulated using a low-cost wafer-level polymer packaging technique.