1. Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment.
- Author
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Chang, Kuan-Chang, Chen, Jung-Hui, Tsai, Tsung-Ming, Chang, Ting-Chang, Huang, Syuan-Yong, Zhang, Rui, Chen, Kai-Huang, Syu, Yong-En, Chang, Geng-Wei, Chu, Tian-Jian, Liu, Guan-Ru, Su, Yu-Ting, Chen, Min-Chen, Pan, Jhih-Hong, Liao, Kuo-Hsiao, Tai, Ya-Hsiang, Young, Tai-Fa, Sze, Simon M., Ai, Chi-Fong, and Wang, Min-Chuan
- Subjects
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RANDOM access memory , *SUPERCRITICAL carbon dioxide , *SUPERCRITICAL fluids , *CHEMICAL bonds , *HYDRATION , *SILICON oxide films , *SCHOTTKY effect - Abstract
Highlights: [•] The supercritical fluid treatment can efficiently reduce the operation current of resistance random access memory. [•] The dangling bonds of Sn:SiO x thin film were cross linking by the hydration–dehydration reaction by supercritical fluid treatment. [•] The current conduction mechanism of low resistance state in post-treated RRAM device was dominated by hopping conduction. [•] The current conduction mechanism of high resistance state in post-treated RRAM device was dominated by Schottky emission. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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